TC281

1036-

× 1010-PIXEL CCD IMAGE SENSOR

SOCS058B – JUNE 1996 – REVISED MAY 1999

1

POST OFFICE BOX 655303

Frame-Transfer Image Sensor

Antiblooming

Texas Instruments (TI

™) Advanced BCD

Node Technology

Burn-In, Residual Imaging, Image

Distortion, Image Lag, or Microphonics

description

The TC281 is a frame-transfer charge-coupled-device (CCD) image sensor that provides a very high-resolution

image acquisition capability for image-processing applications such as robotic vision, medical X-ray analysis,

and metrology. The image sensing area measures 8 mm horizontally and 8 mm vertically; the image-area

diagonal measures 11,3 mm and the sensor has 8-

µm square pixels. The image area contains 1000 active lines

with 1000 active pixels per line. The dark reference signal can be obtained from ten dark reference lines located

between the image area and the storage area, 28 dark reference pixels located at the left edge of each horizontal

line, and 8 dark reference pixels located at the right edge of each horizontal line.

The storage section of the TC281 contains 1010 lines with 1036 pixels per line. The area is protected from

exposure to light by a metal layer. Photoelectric charge that is generated in the image area of the sensor can

be transferred into the storage section in less than 110

µs. After the image capture is completed (integration

time), the image readout is accomplished by transferring charge, one line at a time, into the serial register

located below the storage area. The serial register contains 1036 active pixels and 9 dummy pixels. The

maximum serial-register data rate is 40 megapixels per second. If the storage area needs to be cleared of all

charge, charge may be quickly transferred across the serial registers into the clearing drain located below the

register.

A high performance bulk charge detection (BCD) structure converts charge from each pixel into an output

voltage. A low-noise, two-stage, source-follower amplifier further buffers the signal before it is sent to the output

pin. A readout rate of 30 frames per second is easily achievable with this device.

The blooming-protection of the sensor is based on an advanced lateral-overflow-drain structure (ALOD). The

antiblooming function is activated when a suitable dc bias is applied to the overflow-drain pin. With this type of

blooming protection it is also possible to clear the image area of charge completely. This is accomplished by

providing a single 10V pulse of at least 1

µs duration to the overflow-drain pin.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Copyright

© 1999, Texas Instruments Incorporated

SUB 1

ODB 2

IAG 3

SUB 4

SAG 5

SAG 6

SUB 7

OUT 8

ADB 9

CDB 10

VGATE 11

22 SUB

21 TDB

20 IAG

19 SUB

18 SUB

17 SUB

16 NC

15 SRG

14 TRG

13 VSOURCE

12 RST

TI is a trademark of Texas Instruments Incorporated.