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TMS320VC5420 Datasheet(PDF) 16 Page - Texas Instruments |
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TMS320VC5420 Datasheet(HTML) 16 Page - Texas Instruments |
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16 / 77 page ![]() TMS320VC5420 FIXED-POINT DIGITAL SIGNAL PROCESSOR SPRS080C – MARCH 1999 – REVISED APRIL 2000 16 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 memory The total memory address range for each ’5420 subsystem is 384K 16-bit words. The memory space is divided into three specific memory segments: 256K-word program, 64K-word data, and 64K-word I/O. The program memory space contains the instructions to be executed as well as tables used in execution. The data memory space stores data used by the instructions. The I/O memory space is used to interface to external memory-mapped peripherals and can also serve as extra data storage space. The CPU I/O space should not be confused with the DMA I/O space, which is completely independent and not accessible by the CPU. on-chip dual-access RAM (DARAM) The ’5420 subsystems A and B each have 16K × 16-bit on-chip DARAM (2 blocks of 8K words). Each of these RAM blocks can be accessed twice per machine cycle. This memory is intended primarily to store data values; however, it can be used to store program as well. At reset, the DARAM is mapped into data memory space. DARAM can be mapped into program/data memory space by setting the OVLY bit in the PMST register. on-chip single-access RAM (SARAM) The ’5420 subsystems A and B each have 84K-word × 16-bit on-chip SARAM (ten blocks of 8K words each and one block of 4K words). Each of these SARAM blocks is a single-access memory. This memory is intended primarily to store data values; however, it can be used to store program as well. At reset, the SARAM (4000h–7FFFh) is mapped into data memory space. This memory range can be mapped into program/data memory space by setting the OVLY bit in the PMST register. The SARAM at 8000h–FFFFh is program memory at reset and can be configured as program/data memory by setting the DROM bit. SARAM spaces18000h–1FFFFh and 2F000h–2FFFFh are mapped as program memory only. program memory The ’5420 device features a paged extended memory scheme in program space to allow access of up to 256K of program memory relative to each subsystem. This extended program memory (each subsystem) is organized into four pages (0–3), each 64K in length. A hardware pin is used to select which DSP subsystem (A or B) has control of the external memory interface. To implement the extended program memory scheme, the ’5420 device includes the following features: D Two additional address lines (for a total of 18) D A pin (SELA/B) for external memory interface arbitration between subsystem A and B data memory The data memory space on each ’5420 subsystem contains up to 64K 16-bit word addresses. The device automatically accesses the on-chip RAM when addressing within its bounds. When an address is generated outside the RAM bounds, the device automatically generates an external access. parallel I/O ports Each subsystem of the ’5420 has a total of 64K I/O ports. These ports can be addressed by PORTR and PORTW. The IS signal indicates the read/write access through an I/O port. The devices can interface easily with external devices through the I/O ports while requiring minimal off-chip address-decoding logic. The SELA/B pin selects which subsystem has access to the external I/O space. external memory interface The ’5420 has a single external memory interface shared between both subsystems. The external memory interface enables the ’5420 subsystems to connect to external memory devices or other parallel interfaces. The SELA/B pin is used to determine which subsystem has access to the external memory interface. When the SELA/B pin is low, subsystem A has access to the external memory interface, and when it is high, subsystem |
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