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ADP1877ACPZ-R7 Datasheet(PDF) 15 Page - Analog Devices |
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ADP1877ACPZ-R7 Datasheet(HTML) 15 Page - Analog Devices |
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15 / 32 page ![]() ADP1877 Rev. 0 | Page 15 of 32 VIN VCCO V SYNCHRONOUS RECTIFIER AND DEAD TIME The synchronous rectifier (low-side MOSFET) improves efficiency by replacing the Schottky diode that is normally used in an asynchronous buck regulator. In the ADP1877, the antishoot- through circuit monitors the SW and DL nodes and adjusts the low-side and high-side drivers to ensure break-before-make switching to prevent cross-conduction or shoot-through between the high-side and low-side MOSFETs. This break-before-make switching is known as the dead time, which is not fixed and depends on how fast the MOSFETs are turned on and off. In a typical application circuit that uses medium sized MOSFETs with input capacitance of approximately 3 nF, the typical dead time is approximately 30 ns. When small and fast MOSFETs are used, the dead time can be as low as 13 ns. INPUT UNDERVOLTAGE LOCKOUT When the bias input voltage, VIN, is less than the undervoltage lockout (UVLO) threshold, the switch drivers stay inactive. When VIN exceeds the UVLO threshold, the switchers start switching. INTERNAL LINEAR REGULATOR The internal linear regulator is low dropout (LDO), meaning it can regulate its output voltage, VCCO. VCCO powers up the internal control circuitry and provides power for the gate drivers. It is guaranteed to have more than 200 mA of output current capability, which is sufficient to handle the gate drive requirements of typical logic threshold MOSFETs driven at up to 1.5 MHz. VCCO is always active and cannot be shut down by the EN1/EN2 pins. Bypass VCCO to AGND with a 1 μF or greater capacitor. Because the LDO supplies the gate drive current, the output of VCCO is subject to sharp transient currents as the drivers switch and the boost capacitors recharge during each switching cycle. The LDO has been optimized to handle these transients without overload faults. Due to the gate drive loading, using the VCCO output for other external auxiliary system load is not recommended. The LDO includes a current limit well above the expected maximum gate drive load. This current limit also includes a short-circuit fold back to further limit the VCCO current in the event of a short-circuit fault. The VDL pin provides power to the low-side driver. Connect VDL to VCCO. Bypass VDL to PGND with a 1 μF (minimum) ceramic capacitor, which must be placed close to the VDL pin. For an input voltage less than 5.5 V, it is recommended to bypass the LDO by connecting VIN to VCCO, as shown in Figure 27, thus eliminating the dropout voltage. However, for example, if the input range is 4 V to 7 V, the LDO cannot be bypassed by shorting VIN to VCCO because the 7 V input has exceeded the maximum voltage rating of the VCCO pin. In this case, use the LDO to drive the internal drivers, but keep in mind that there is a dropout when VIN is less than 5 V. IN = 2.75V TO 5.5V ADP1877 Figure 27. Configuration for VIN < 5.5 V OVERVOLTAGE PROTECTION The ADP1877 has a built-in circuit for detecting output overvoltage at the FB node. When the FB voltage, VFB, rises above the overvoltage threshold, the low-side NMOSFET is immediately turned on, and the high-side NMOSFET is turned off until the VFB drops below the undervoltage threshold. This action is known as the crowbar overvoltage protection. If the overvoltage condition is not removed, the controller maintains the feedback voltage between the overvoltage and undervoltage thresholds, and the output is regulated to within approximately +16% and −10% of the regulation voltage. During an overvoltage event, the SS node discharges toward zero through an internal 1 kΩ pull-down resistor. When the voltage at FB drops below the undervoltage threshold, the soft start sequence restarts. The following graph shows the overvoltage protection scheme in action in PSM. CH3 5V CH2 5V CH1 10V CH4 500mV M200µs A CH4 2.05V 1 2 3 DH1 PGOOD1 VO1 = 1.8V SHORTED TO 2.2V SOURCE VIN (CH3) 4 Figure 28. Overvoltage Protection in PSM POWER GOOD The PGOODx pin is an open-drain NMOS with an internal 12 kΩ pull-up resistor connected between PGOODx and VCCO. PGOODx is internally pulled up to VCCO during normal operation and is active low when tripped. When the feedback voltage, VFB, rises above the overvoltage threshold or drops below the undervoltage threshold, the PGOODx output is pulled to ground after a delay of 12 μs. The overvoltage or undervoltage condition must exist for more than 12 μs for PGOODx to become active. The PGOODx output also becomes active if a thermal overload condition is detected. |
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