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IMX35 Datasheet(PDF) 54 Page - Freescale Semiconductor, Inc |
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IMX35 Datasheet(HTML) 54 Page - Freescale Semiconductor, Inc |
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54 / 148 page ![]() i.MX35 Applications Processors for Industrial and Consumer Products, Rev. 6 Freescale Semiconductor 54 NOTE SDRAM CLK and DQS-related parameters are measured from the 50% point—that is, “high” is defined as 50% of signal value and “low” is defined as 50% of signal value. DDR SDRAM CLK parameters are measured at the crossing point of SDCLK and SDCLK (inverted clock). Test conditions are: Capacitance 15 pF for DDR PADS. Recommended drive strength is Medium for SDCLK and High for Address and controls. Figure 35. Mobile DDR SDRAM Write Cycle Timing Diagram Table 39. DDR2 SDRAM Read Cycle Parameter Table ID PARAMETER Symbol DDR2-400 Unit Min Max DDR24 DQS – DQ Skew (defines the Data valid window in read cycles related to DQS). tDQSQ —0.35 ns DDR25 DQS DQ in HOLD time from DQS1 1The value was calculated for an SDCLK frequency of 133 MHz by the formula tQH = tHP – tQHS = min (tCL,tCH) – tQHS = 0.45 × tCK – tQHS = 0.45 × 7.5 – 0.45 = 2.925 ns. tQH 2.925 — ns DDR26 DQS output access time from SDCLK posedge tDQSCK –0.5 0.5 ns Table 40. Mobile DDR SDRAM Write Cycle Timing Parameters1 1 Test condition: Measured using delay line 5 programmed as follows: ESDCDLY5[15:0] = 0x0703. ID Parameter Symbol Min. Max. Unit SD17 DQ and DQM setup time to DQS tDS 0.95 — ns SD18 DQ and DQM hold time to DQS tDH 0.95 — ns SD19 Write cycle DQS falling edge to SDCLK output delay time. tDSS 1.8 — ns SD20 Write cycle DQS falling edge to SDCLK output hold time. tDSH 1.8 — ns SDCLK SDCLK DQS (output) DQ (output) DQM (output) Data Data Data Data Data Data Data Data DM DM DM DM DM DM DM DM SD17 SD17 SD17 SD17 SD18 SD18 SD18 SD18 SD19 SD20 |
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