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SE97B Datasheet(PDF) 41 Page - NXP Semiconductors |
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SE97B Datasheet(HTML) 41 Page - NXP Semiconductors |
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41 / 53 page ![]() SE97B_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 27 January 2010 41 of 53 NXP Semiconductors SE97B DDR memory module temp sensor with integrated SPD Fig 28. EVENT output VOL at IOL = 0.7 mA Fig 29. EVENT output VOL at IOL =2.1 mA Fig 30. EVENT output VOL at IOL = 3.0 mA Fig 31. Conversion rate Fig 32. Conversion period Fig 33. EEPROM write cycle time Tamb (°C) −40 120 80 040 002aaf186 0.08 0.12 0.04 0.16 0.20 0 VOL (V) VDD = 3.6 V 3.0 V Tamb (°C) −40 120 80 040 002aaf187 0.08 0.12 0.04 0.16 0.20 0 VOL (V) VDD = 3.6 V 3.0 V Tamb (°C) −40 120 80 040 002aaf188 0.08 0.12 0.04 0.16 0.20 0 VOL (V) VDD = 3.6 V 3.0 V Tamb (°C) −40 120 80 040 002aad886 9 11 7 13 15 5 conversion rate (conv/s) 60 120 100 80 140 Tconv (ms) 002aad887 Tamb (°C) −40 120 80 040 3 4 5 Tcy(W) (ms) 2 Tamb (°C) −40 120 80 040 002aad888 |
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