BGU7003 datasheet(2/17 Pages) NXP

2 / 17 page

BGU7003_1

Product data sheet

Rev. 01 — 2 March 2009

2 of 17

NXP Semiconductors

BGU7003

Wideband silicon germanium low-noise ampliﬁer MMIC

1.4 Quick reference data

[1]

ICC(tot) = ICC + IRF_OUT + IR_BIAS.

[2]

Tsp is the temperature at the solder point of the ground lead.

Pinning information

Ordering information

Marking

Table 1.

Quick reference data

Tamb =25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; f = 1575 MHz; ZS = ZL = 50 Ω (input and output matched to

Ω) unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCC

supply voltage

RF input AC coupled

2.2

2.85

ICC(tot)

total supply current

conﬁgurable with external resistor

[1] 3

Tamb

ambient temperature

−40 +25

+85

°C

Ptot

total power dissipation

Tsp ≤ 103 °C

[2] -

|s21|2

Insertion power gain

18.3

noise ﬁgure

0.80

Pi(1dB)

input power at 1 dB gain compression

−20.1 -

dBm

IP3I

input third-order intercept point

jammers at f1 = f + 138 MHz and

f2 = f + 276 MHz

−0.2

dBm

Table 2.

Pinning

Description

Simpliﬁed outline

Graphic symbol

R_BIAS

RF_IN

GND

RF_OUT

ENABLE

6VCC

bottom view

sym128

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BGU7003

XSON6

plastic extremely thin small outline package; no leads;

6 terminals; body 1

× 1 × 0.5 mm

SOT891

Table 4.

Marking codes

Type number

Marking code

BGU7003

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