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BGU7003 Datasheet(PDF) 13 Page - NXP Semiconductors |
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BGU7003 Datasheet(HTML) 13 Page - NXP Semiconductors |
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13 / 17 page ![]() BGU7003_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 13 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC Tamb =25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; f = 1.575 GHz; VENABLE ≥ 0.7 V; ZS =ZL =50 Ω (input and output matched to 50 Ω). Tamb =25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS =ZL =50 Ω (input and output matched to 50 Ω). Fig 21. Power gain as a function of drive power; typical values Fig 22. Power gain and noise figure as function of frequency; typical values Pdrive (dBm) −35 −15 −19 −27 −23 −31 001aaj673 14 18 22 Gp (dB) 10 f (MHz) 1475 1675 1625 1525 1575 001aaj674 15 10 20 25 Gp (dB) 5 1 0.5 1.5 2 NF (dB) 0 NF Gp |
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