BGU7003_1

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 2 March 2009

3 of 17

NXP Semiconductors

BGU7003

Wideband silicon germanium low-noise amplifier MMIC

5.

Limiting values

[1]

6.

Thermal characteristics

7.

Characteristics

[1]

[2]

Guaranteed by design and characterization.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

supply voltage

RF input AC coupled

-

3.0

V

total supply current

configurable with external resistor

-

25

mA

total power dissipation

[1] -70

mW

storage temperature

−65 +150 °C

junction temperature

-

150

°C

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction to solder point

235

K/W

Table 7.

Characteristics

measurements done on characterization board without matching, de-embedded up to the pins.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

supply voltage

RF input AC coupled

2.2

-

2.85

V

total supply current

configurable with external resistor

[1] 3

-

15

mA

[1] -

-

0.001 mA

ambient temperature

−40 +25 +85

°C

insertion power gain

f = 1.575 GHz

16.0 17.5 -

dB

f = 2.4 GHz

[2] 14.0 15.2 -

dB

f = 5.8 GHz

[2] 10.0 11.4 -

dB

f = 1.575 GHz

[2] 15.0 17.5 -

dB

f = 2.4 GHz

[2] 13.0 15.2 -

dB

f = 5.8 GHz

[2] 9.0

11.4 -

dB

MSG

maximum stable gain

f = 1.575 GHz

-

20.5 -

dB

f = 2.4 GHz

-

17.8 -

dB

f = 5.8 GHz

-

15.4 -

dB

minimum noise figure

f = 1.575 GHz

-

0.70 -

dB

f = 2.4 GHz

-

0.80 -

dB

f = 5.8 GHz

-

1.5

-

dB