BGU7003 datasheet(12/17 Pages) NXP

12 / 17 page

BGU7003_1

Product data sheet

Rev. 01 — 2 March 2009

12 of 17

NXP Semiconductors

BGU7003

Wideband silicon germanium low-noise ampliﬁer MMIC

Tamb =25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA;

VENABLE ≥ 0.7 V; ZS =ZL =50 Ω (input and output

matched to 50

Ω).

Tamb =25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA;

VENABLE ≥ 0.7 V; ZS =ZL =50 Ω (input and output

matched to 50

Ω).

Fig 17. Insertion power gain (

|s21|2) as a function of

frequency; typical values

Fig 18. Reverse Isolation (

|s12|2) as a function of

frequency; typical values

f (MHz)

1000

2000

3000

3500

2500

1500

500

001aaj669

|S21|2

(dB)

f (MHz)

1000

2000

3000

3500

2500

1500

500

001aaj702

−40

−20

|S12|2

(dB)

−60

Tamb =25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA;

f = 1.575 GHz; f1 = f + 138 MHz; f2 = f + 276 MHz;

VENABLE ≥ 0.7 V; ZS =ZL =50 Ω (input and output

matched to 50

Ω)

Tamb =25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA;

f = 1.575 GHz; f1 = f + 5 MHz; f2 = f + 10 MHz;

VENABLE ≥ 0.7 V; ZS =ZL =50 Ω (input and output

matched to 50

Ω)

Fig 19. Load power and third order intermodulation

distortion as function of drive power;

typical values

Fig 20. Load power and third order intermodulation

distortion as function of drive power;

typical values

Pdrive (dBm)

−40

−20

−10

−30

001aaj671

−40

−80

(dB)

−120

IP3I = −0.2 dBm

IMD3

Pdrive (dBm)

−40

−10

−30

−20

001aaj672

−40

−80

(dB)

−120

IP3I = −5.2 dBm

IMD3

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