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PBSS302ND Datasheet(PDF) 5 Page - NXP Semiconductors |
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PBSS302ND Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 14 page ![]() PBSS302ND_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 18 February 2008 5 of 14 NXP Semiconductors PBSS302ND 40 V, 4 A NPN low VCEsat (BISS) transistor FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values FR4 PCB, mounting pad for collector 6 cm2 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa272 10 1 102 103 Zth(j-a) (K/W) 10−1 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 006aaa273 10 1 102 103 Zth(j-a) (K/W) 10−1 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 |
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