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PBSS302ND Datasheet(PDF) 9 Page - NXP Semiconductors |
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PBSS302ND Datasheet(HTML) 9 Page - NXP Semiconductors |
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9 / 14 page  PBSS302ND_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 18 February 2008 9 of 14 NXP Semiconductors PBSS302ND 40 V, 4 A NPN low VCEsat (BISS) transistor 8. Test information Fig 13. BISS transistor switching time definition VCC =10V; IC = 2 A; IBon = 0.1 A; IBoff = −0.1 A Fig 14. Test circuit for switching times 006aaa003 IBon (100 %) IB input pulse (idealized waveform) IBoff 90 % 10 % IC (100 %) IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff RC R2 R1 DUT mlb826 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB VI VCC |
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