PBSS302ND datasheet(7/14 Pages) NXP

7 / 14 page

PBSS302ND_2

Product data sheet

Rev. 02 — 18 February 2008

7 of 14

NXP Semiconductors

PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

VCE =2V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 5.

DC current gain as a function of collector

current; typical values

Fig 6.

Collector current as a function of

collector-emitter voltage; typical values

VCE =2V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 7.

Base-emitter voltage as a function of collector

current; typical values

Fig 8.

Base-emitter saturation voltage as a function of

collector current; typical values

IC (mA)

10−1

105

104

103

1102

006aaa274

400

600

200

800

1000

hFE

(1)

(2)

(3)

VCE (V)

2.0

1.6

0.8

1.2

0.4

006aaa280

(A)

IB (mA) = 400

360

280

240

200

160

120

320

IC (mA)

10−1

105

104

103

1102

006aaa275

0.8

0.4

1.2

1.6

VBE

(V)

(1)

(2)

(3)

IC (mA)

10−1

105

104

103

1102

006aaa344

0.8

0.4

1.2

1.6

VBEsat

(V)

(1)

(2)

(3)

PBSS302ND Datasheet(PDF) 7 Page - NXP Semiconductors

PBSS302ND Datasheet(HTML) 7 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL