PBSS302ND datasheet(12/14 Pages) NXP

12 / 14 page

PBSS302ND_2

Product data sheet

Rev. 02 — 18 February 2008

12 of 14

NXP Semiconductors

PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

12. Revision history

Table 9.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

PBSS302ND_2

20080218

Product data sheet

PBSS302ND_1

Modiﬁcations:

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Section 1.1 “General description”: amended

• Section 1.4 “Quick reference data”: ICM conditions amended

• Figure 2, 3, 4, and 6: amended

• Table 5: ICM conditions amended

• Table 5: IBM conditions amended

• Table 6: typing error for maximum value on 6 cm2 footprint amended

• Table 7: typical values for hFE added

• Section 8 “Test information”: added

• Section 11 “Soldering”: added

• Section 13 “Legal information”: updated

PBSS302ND_1

20050419

Product data sheet

PBSS302ND Datasheet(PDF) 12 Page - NXP Semiconductors