PBSS302ND datasheet(6/14 Pages) NXP

6 / 14 page

PBSS302ND_2

Product data sheet

Rev. 02 — 18 February 2008

6 of 14

NXP Semiconductors

PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Table 7.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =40V; IE = 0 A

0.1

µA

VCB =40V; IE =0A;

Tj = 150 °C

--50

µA

ICES

collector-emitter

cut-off current

VCE =30V; VBE =0V

0.1

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

0.1

µA

hFE

DC current gain

VCE =2V; IC = 0.5 A

300

500

VCE =2V; IC =1A

[1] 300

475

VCE =2V; IC =2A

[1] 250

385

VCE =2V; IC =4A

[1] 100

190

VCE =2V; IC =6A

[1] 50

100

VCEsat

collector-emitter

saturation voltage

IC = 0.5 A; IB = 50 mA

IC = 1 A; IB = 50 mA

110

IC = 2 A; IB = 200 mA

115

180

IC = 4 A; IB = 400 mA

[1] -

220

300

IC = 6 A; IB = 600 mA

[1] -

330

450

RCEsat

collector-emitter

saturation resistance

IC = 6 A; IB = 600 mA

[1] -

5575m

Ω

VBEsat

base-emitter

saturation voltage

IC = 0.5 A; IB = 50 mA

0.79

0.85

IC = 1 A; IB = 50 mA

0.81

0.9

IC = 1 A; IB = 100 mA

[1] -

0.83

IC = 4 A; IB = 400 mA

[1] -

1.0

1.1

VBEon

base-emitter turn-on

voltage

VCE =2V; IC = 2 A

0.79

1.0

delay time

VCC =10V; IC =2A;

IBon = 0.1 A;

IBoff = −0.1 A

-12

rise time

ton

turn-on time

storage time

390

fall time

120

toff

turn-off time

510

transition frequency

VCE =10V; IC = 0.1 A;

f = 100 MHz

150

MHz

collector capacitance VCB =10V; IE =ie =0A;

f=1MHz

-30

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