PBSS302ND datasheet(8/14 Pages) NXP

8 / 14 page

PBSS302ND_2

Product data sheet

Rev. 02 — 18 February 2008

8 of 14

NXP Semiconductors

PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

(1) IC/IB = 100

(2) IC/IB =50

(3) IC/IB =10

Fig 9.

Collector-emitter saturation voltage as a

function of collector current; typical values

Fig 10. Collector-emitter saturation voltage as a

function of collector current; typical values

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

(1) IC/IB = 100

(2) IC/IB =50

(3) IC/IB =10

Fig 11. Collector-emitter saturation resistance as a

function of collector current; typical values

Fig 12. Collector-emitter saturation resistance as a

function of collector current; typical values

10−1

10−2

VCEsat

(V)

10−3

006aaa276

IC (mA)

10−1

105

104

103

1102

(1)

(2)

(3)

10−1

10−2

VCEsat

(V)

10−3

006aaa277

IC (mA)

10−1

105

104

103

1102

(1)

(2)

(3)

10−1

102

103

RCEsat

(

Ω)

10−2

006aaa281

IC (mA)

10−1

105

104

103

1102

(1)

(2)

(3)

10−1

102

103

RCEsat

(

Ω)

10−2

006aaa326

IC (A)

10−1

105

104

103

1102

(2)

(1)

(3)

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