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12F629 Datasheet(PDF) 85 Page - Microchip Technology |
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12F629 Datasheet(HTML) 85 Page - Microchip Technology |
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85 / 136 page ![]() 2010 Microchip Technology Inc. DS41190G-page 85 PIC12F629/675 12.0 ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings† Ambient temperature under bias........................................................................................................... -40 to +125°C Storage temperature ........................................................................................................................ -65°C to +150°C Voltage on VDD with respect to VSS ..................................................................................................... -0.3 to +6.5V Voltage on MCLR with respect to Vss ..................................................................................................-0.3 to +13.5V Voltage on all other pins with respect to VSS ........................................................................... -0.3V to (VDD + 0.3V) Total power dissipation(1) ............................................................................................................................... 800 mW Maximum current out of VSS pin ..................................................................................................................... 300 mA Maximum current into VDD pin ........................................................................................................................ 250 mA Input clamp current, IIK (VI < 0 or VI > VDD) 20 mA Output clamp current, IOK (Vo < 0 or Vo >VDD) 20 mA Maximum output current sunk by any I/O pin.................................................................................................... 25 mA Maximum output current sourced by any I/O pin .............................................................................................. 25 mA Maximum current sunk by all GPIO ................................................................................................................ 125 mA Maximum current sourced all GPIO ................................................................................................................ 125 mA Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD - IOH} + {(VDD-VOH) x IOH} + (VOl x IOL). † NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Note: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up. Thus, a series resistor of 50-100 should be used when applying a “low” level to the MCLR pin, rather than pulling this pin directly to VSS. |
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