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12F629 Datasheet(PDF) 94 Page - Microchip Technology

Part # 12F629
Description  8-Pin, Flash-Based 8-Bit CMOS Microcontrollers
PDF  136 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

12F629 Datasheet(HTML) 94 Page - Microchip Technology

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PIC12F629/675
DS41190G-page 94
 2010 Microchip Technology Inc.
12.7
DC Characteristics: PIC12F629/675-I (Industrial), PIC12F629/675-E (Extended) (Cont.)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
 TA  +85°C for industrial
-40°C
 TA  +125°C for extended
Param
No.
Sym
Characteristic
Min
Typ†
Max
Units
Conditions
Capacitive Loading Specs
on Output Pins
D100
COSC2 OSC2 pin
—
—
15*
pF
In XT, HS and LP modes when
external clock is used to drive
OSC1
D101
CIO
All I/O pins
—
—
50*
pF
Data EEPROM Memory
D120
ED
Byte Endurance
100K
1M
—
E/W -40
C  TA +85°C
D120A
ED
Byte Endurance
10K
100K
—
E/W +85°C
 TA +125°C
D121
VDRW VDD for Read/Write
VMIN
—
5.5
V
Using EECON to read/write
VMIN = Minimum operating
voltage
D122
TDEW Erase/Write cycle time
—
5
6
ms
D123
TRETD Characteristic Retention
40
—
—
Year Provided no other specifications
are violated
D124
TREF
Number of Total Erase/Write
Cycles before Refresh(1)
1M
10M
—
E/W -40
C  TA +85°C
Program Flash Memory
D130
EP
Cell Endurance
10K
100K
—
E/W -40
C  TA +85°C
D130A
ED
Cell Endurance
1K
10K
—
E/W +85°C
 TA +125°C
D131
VPR
VDD for Read
VMIN
—5.5
V
VMIN = Minimum operating
voltage
D132
VPEW VDD for Erase/Write
4.5
—
5.5
V
D133
TPEW
Erase/Write cycle time
—
2
2.5
ms
D134
TRETD Characteristic Retention
40
—
—
Year Provided no other specifications
are violated
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25
C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: See Section 8.5.1 “Using the Data EEPROM” for additional information.



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