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12F629 Datasheet(PDF) 94 Page - Microchip Technology |
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12F629 Datasheet(HTML) 94 Page - Microchip Technology |
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94 / 136 page ![]() PIC12F629/675 DS41190G-page 94 2010 Microchip Technology Inc. 12.7 DC Characteristics: PIC12F629/675-I (Industrial), PIC12F629/675-E (Extended) (Cont.) DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C TA +85°C for industrial -40°C TA +125°C for extended Param No. Sym Characteristic Min Typ† Max Units Conditions Capacitive Loading Specs on Output Pins D100 COSC2 OSC2 pin — — 15* pF In XT, HS and LP modes when external clock is used to drive OSC1 D101 CIO All I/O pins — — 50* pF Data EEPROM Memory D120 ED Byte Endurance 100K 1M — E/W -40 C TA +85°C D120A ED Byte Endurance 10K 100K — E/W +85°C TA +125°C D121 VDRW VDD for Read/Write VMIN — 5.5 V Using EECON to read/write VMIN = Minimum operating voltage D122 TDEW Erase/Write cycle time — 5 6 ms D123 TRETD Characteristic Retention 40 — — Year Provided no other specifications are violated D124 TREF Number of Total Erase/Write Cycles before Refresh(1) 1M 10M — E/W -40 C TA +85°C Program Flash Memory D130 EP Cell Endurance 10K 100K — E/W -40 C TA +85°C D130A ED Cell Endurance 1K 10K — E/W +85°C TA +125°C D131 VPR VDD for Read VMIN —5.5 V VMIN = Minimum operating voltage D132 VPEW VDD for Erase/Write 4.5 — 5.5 V D133 TPEW Erase/Write cycle time — 2 2.5 ms D134 TRETD Characteristic Retention 40 — — Year Provided no other specifications are violated * These parameters are characterized but not tested. † Data in “Typ” column is at 5.0V, 25 C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: See Section 8.5.1 “Using the Data EEPROM” for additional information. |
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