6-37
6
Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
ü
SiGe HBT
Si CMOS
19
18
17
16
14
CELL OUT
13
VGC
12
PCS OUT
10
9
8
7
5
IF-
4
IF+
3
BYPASS
2
LO
1
PD
Logic
*
*
*
*
* Represents "GND".
20
6
11
PCS
ATT GND
15
CELL
ATT GND
RF2643
3V DUAL-BAND UPCONVERTER
AND DRIVER AMPLIFIER
• TDMA/AMPS Cellular Systems
• CDMA/AMPS Cellular Systems
•PCS Systems
• Portable Battery-Powered Equipment
The RF2643 is a complete upconverter, dual-power
amplifier driver and attenuator designed for Cellular and
PCS systems. It is designed to upconverter and amplifies
RF signals while providing 22dB of linear gain control
range. It features digital control for the mixer and drivers.
The device features balanced IF inputs, single-ended LO
input and dual RF output for Cellular and PCS Systems
respectively. The IC is manufactured on an advanced Sili-
con Bi-CMOS process and packaged in a 20-pin,
4 mmx4mm, leadless chip carrier with an exposed die
flag.
• Single Supply 3.0V Operation
• Power Down Control
• Gain Control Range of 22dB
• Driver Amplifier Select Pin (RF Output
Select)
• High Linearity in Mixer and Driver Amp
RF2643
3V Dual-Band Upconverter and Driver Amplifier
RF2643 PCBA
Fully Assembled Evaluation Board
6
Rev A1 010717
1.00
0.90
4.00
sq.
0.60
0.24 typ
3
0.20
0.75
0.50
0.23
0.13
4PLCS
0.50
2.10
sq.
0.65
0.30
4PLCS
0.05
12°
MAX
Dimensions in mm.
Note orientation of package.
NOTES:
Package Warpage: 0.05 mm max.
4
Die Thickness Allowable: 0.305 mm max.
5
Pin 1 identifier must exist on top surface of package by identification
mark or feature on the package body. Exact shape and size is optional.
2
Shaded lead is Pin 1.
1
Dimension applies to plated terminal: to be measured between 0.02 mm
and 0.25 mm from terminal end.
3
Package Style: LCC, 20-Pin, 4x4
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