| Electronic Components Datasheet Search |
|
S3P9014 Datasheet(PDF) 19 Page - Samsung semiconductor |
|
|
|||||||||||||||||||||||||||||
S3P9014 Datasheet(HTML) 19 Page - Samsung semiconductor |
|
19 / 26 page ![]() S3C9004/P9004/C9014/P9014 ELECTRICAL DATA 12-11 Table 12-8. External Memory Timing Characteristics (4 MHz) (T A = – 40 °C to + 85°C, V DD = 4.5 V to 5.5 V) Number Symbol Parameter Normal Timing (ns) Min Max 1 t dA (AS) Address valid to AS ↑ delay 10 – 2 t dAS (A) AS ↑ to address float delay 35 – 3 t dAS (DR) AS ↑ to read data required valid – 140 4 t wAS AS Low width 88 – 5 t dA (DS) Address float to DS ↓ 0 – 6a t wDS (read) DS (read) Low width 314 – 6b t wDS (write) DS (write) Low width 164 – 7 t dDS (DR) DS ↓ to read data required valid – 80 8 t hDS (DR) Read data to DS ↑ hold time 0 – 9 t dDS (A) DS ↑ to address active delay 20 – 10 t dDS (AS) DS ↑ to AS ↓ delay 30 – 11 t dDO (DS) Write data valid to DS (write) ↓ delay 10 – 12 t dRW (AS) R/ W valid to AS ↑ delay 20 – 13 t dDS (DW) DS ↑ to write data not valid delay 20 – NOTES: 1. All times are in nano seconds (ns) and assume an 4 MHz input frequency. 2. Wait states add 100 ns to the time of numbers 3, 6a, 6b, and 7. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |