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SST26WF032 Datasheet(PDF) 2 Page - Silicon Storage Technology, Inc |
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SST26WF032 Datasheet(HTML) 2 Page - Silicon Storage Technology, Inc |
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2 / 36 page ![]() ©2010 Silicon Storage Technology, Inc. S71409-01-000 01/10 2 1.8V Serial Quad I/O (SQI) Flash Memory SST26WF032 Advance Information Product Description The Serial Quad I/O™ (SQI™) family of flash-memory devices features a 4-bit, multiplexed I/O inter- face that allows for low-power, high-performance operation in a low pin-count package. System designs using SQI flash devices occupy less board space and ultimately lower system costs. All members of the 26 Series, SQI family are manufactured with SST proprietary, high-performance CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain bet- ter reliability and manufacturability compared with alternate approaches. The SST26WF032 significantly improves performance and reliability, while lowering power consump- tion. This device writes (Program or Erase) with a single power supply of 1.65-1.95V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given volt- age range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. SST26WF032 is offered in both 8-contact WSON (6 mm x 5 mm), and 8-lead SOIC (200 mil) pack- ages. See Figure 2 for pin assignments. |
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