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ZXLD1370 Datasheet(PDF) 19 Page - Diodes Incorporated

Part # ZXLD1370
Description  60V HIGH ACCURACY BUCK/BOOST/BUCK-BOOST LED DRIVER CONTROLLER
PDF  33 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXLD1370 Datasheet(HTML) 19 Page - Diodes Incorporated

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ZXLD1370
ZXLD1370
Document number: DS32165 Rev. 2 - 2
19 of 33
www.diodes.com
May 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
The resistive power dissipation of the MOSFET is:
ON
DS
2
RMS
MOSFET
resistive
R
x
I
P
−
−
=
Switching power losses
Calculating the switching MOSFET's switching loss depends on many factors that influence both turn-on and turn-off. Using
a first order rough approximation, the switching power dissipation of the MOSFET is:
GATE
LOAD
sw
IN
2
RSS
switching
I
I
x
f
x
V
x
C
P
=
where
CRSS is the MOSFET's reverse-transfer capacitance (a data sheet parameter),
fSW is the switching frequency,
IGATE is the MOSFET gate-driver's sink/source current at the MOSFET's turn-on threshold.
Matching the MOSFET with the controller is primarily based on the rise and fall time of the gate voltage. The best rise/fall
time in the application is based on many requirements, such as EMI (conducted and radiated), switching losses, lead/circuit
inductance, switching frequency, etc.
How fast a MOSFET can be turned on and off is related to how fast the gate
capacitance of the MOSFET can be charged and discharged. The relationship between C (and the relative total gate
charge Qg), turn-on/turn-off time and the MOSFET driver current rating can be written as:
I
Qg
I
C
dV
dt
=
⋅
=
where
dt = turn-on/turn-off time
dV = gate voltage
C = gate capacitance = Qg/V
I = drive current – constant current source (for the given voltage value)
Here the constant current source” I ” usually is approximated with the peak drive current at a given driver input voltage.
Example 1)
Using the DMN6068 MOSFET (VDS(MAX) = 60V, ID(MAX) = 8.5A):
QG = 10.3nC at VGS = 10V
ZXLD1370 IPEAK = I GATE = 300mA
ns
35
mA
300
nC
3
.
10
I
Q
dt
PEAK
g
=
=
=
Assuming that cumulatively the rise time and fall time can account for a maximum of 10% of the period, the maximum
frequency allowed in this condition is:
tPERIOD = 20*dt
f = 1/ tPERIOD = 1.43MHz
This frequency is well above the max frequency the device can handle, therefore the DNM6068 can be used with the
ZXLD1370 in the whole spectrum of frequencies recommended for the device (from 300kHz to 1MHz).
Example 2)
Using the ZXMN6A09K (VDS(MAX) = 60V, ID(MAX) = 12.2A):
QG = 29nC at VGS = 10V
ZXLD1370 IPEAK = 300mA
ns
97
mA
300
nC
29
I
Q
dt
PEAK
g
=
=
=
Assuming that cumulatively the rise time and fall time can account for a maximum of 10% of the period, the maximum
frequency allowed in this condition is:
tPERIOD = 20*dt
f = 1/ tPERIOD = 515kHz
This frequency is within the recommended frequency range the device can handle, therefore the ZXMN6A09K is
recommended to be used with the ZXLD1370 for frequencies from 300kHz to 500kHz).
The recommended total gate charge for the MOSFET used in conjunction with the ZXLD1370 is less than 30nC.



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