BFP 520

Semiconductor Group

Sep-09-1998

1

NPN Silicon RF Transistor

Preliminary data

• For highest gain low noise amplifier

at 1.8 GHz and 2 mA / 2 V

Outstanding

Noise Figure

F = 0.95 dB

• For oscillators up to 15 GHz

• Transition frequency f

• Gold metalization for high reliability

Siemens Grounded Emitter Transistor

45 GHz

VPS05605

4

2

1

3

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

Package

BFP 520

APs

Q62702-F1794

1 = B

2 = E

3 = C

4 = E

SOT-343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

2.5

V

Collector-base voltage

12

V

Emitter-base voltage

1

V

Collector current

40

mA

Base current

4

mA

Total power dissipation,

100

mW

Junction temperature

150

°C

Ambient temperature

-65 ...+150

°C

Storage temperature

-65 ...+150

°C

Thermal Resistance

Junction - soldering point

1)

≤ 450

K/W

1) TS is measured on the collector lead at the soldering point to the pcb

Semiconductor Group

1

1998-11-01