BFP520 datasheet(2/8 Pages) SIEMENS

2 / 8 page

BFP 520

Semiconductor Group

Sep-09-1998

Electrical Characteristics at

TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO

2.5

3.5

Collector-base cutoff current

VCB = 5 V, IE = 0

ICBO

200

Emitter-base cutoff current

VEB = 1.5 V, IC = 0

IEBO

DC current gain

IC = 20 mA, VCE = 4 V

hFE

150

AC characteristics

GHz

Transition frequency

IC = 30 mA, VCE = 2 V, f = 2 GHz

0.06

Ccb

Collector-base capacitance

VCB = 2 V, f = 1 MHz

Cce

0.3

Collector-emitter capacitance

VCE = 2 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

0.35

Noise figure

IC = 2 mA, VCE = 2 V, ZS = ZSopt ,

f = 1.8 GHz

0.95

Gms

Power gain 1)

IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt ,

f = 1.8 GHz

S21|2

Insertion power gain

IC = 20 mA, VCE = 2 V, f = 1.8 GHz,

ZS = ZL = 50Ω

Third order intercept point at output

VCE = 2 V, f = 1.8 GHz, ZS=ZSopt, ZL=ZLopt ,

IC = 20 mA

IC = 7 mA

dBm

IP3

1dB compression point

VCE = 2 V, f = 1.8 GHz, ZS=ZSopt, ZL=ZLopt ,

IC = 20 mA

IC = 7 mA

dBm

P-1dB

Gms = |S21 / S12|

Gma = |S21 / S12| (k-(k2-1)1/2)

Semiconductor Group

1998-11-01

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