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MIC3000BML Datasheet(PDF) 62 Page - Micrel Semiconductor |
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MIC3000BML Datasheet(HTML) 62 Page - Micrel Semiconductor |
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62 / 68 page ![]() MIC3000 Micrel M9999-101204 62 October 2004 Choosing CCOMP The APC loop is compensated by a capacitor, CCOMP, connected from COMP to either VDDA or GNDA. This capacitor adjusts the slew rate and bandwidth of the loop as follows: SlewRate dV dt I C BW G 2C SLEW COMP M COMP == = / π where: ISLEW = 64µA, GM = 125µMho these relationships are shown graphically in Figure 27 and Figure 28. 0 10 20 30 40 50 60 70 1 6 11 16 21 26 31 36 41 46 51 C COMP (nF) Figure 27. Slew Rate vs. CCOMP Value 0 0.50 1.00 1.50 2.00 2.50 10 20 30 40 50 60 70 80 90 100 C COMP (nF) Figure 28. Open Loop Unity-Gain Bandwidth vs. CCOMP The loop response should be tailored to the data rate, encoding format and maximum run-lengths, and required laser turn-on time. Higher data rates and/or shorter maximum run lengths and/or faster turn-on times call for smaller capaci- tors. Lower data rates and/or longer maximum run lengths and/or slower turn-on times call for larger capacitors. In order to meet the SFP/GBIC turn-on requirement of 1ms, for example, do not employ a capacitor larger than 20nF. Low ESR capacitors such as ceramics will give the best results. Excessive ESR will reduce the effectiveness of CCOMP. The capacitor’s voltage rating must exceed VDDA. Some typical values are shown in Table 20. Application CCOMP (nF) 8b/10b encoding, •1Gbps, tON - 1ms 10 SONET (62b/64b encoding), •1Gbps 22 •155Mbps, tON - 1ms 22 •155Mbps 100 Table 20. Typical Values for CCOMP While there is no theoretical upper limit on the size of CCOMP, it is desirable for the loop to be able to track the changes resulting from periodic temperature compensation. The typi- cal temperature compensation update period is 1.6s. There- fore, a maximum size of 1 µF is recommended. If laser turn- on time is not a factor, a value between 100nF and 1 µF can be used for virtually any typical application. The tradeoff is that higher value capacitors have a larger physical size and cost. In order to maximize the power supply rejection ratio (PSRR), CCOMP should be returned to GNDA when the VBIAS output is sourcing current, e.g., driving an NPN transistor (SRCE bit = 1). CCOMP should be returned to VDDA when the VBIAS output is sinking current, e.g., driving a PNP transistor (SRCE bit =0). Measuring Laser Bias Current VILD+ and VILD– form a pair of pseudo-differential A/D inputs for measuring laser diode bias current via a sense resistor. The signal applied to these inputs is converted to a single-ended, ground-referenced signal for input into the ADC and bias current fault comparator. These inputs have limited common-mode voltage range. The full-scale differen- tial input range is VREF/4 or about 300mV. Figure 25 and Figure 26 illustrate the typical implementation of this function. Note that VILD– is always connected to the circuit’s reference potential: VDD in the case of a common- anode transmitter optical sub-assembly (TOSA) and GND in the case of a common-cathode TOSA. Note that the monitor photodiode current will also flow in the sense resistor. This will result in a small offset in the measured bias current. The APC function will hold this term constant, so it can be corrected for in the external calibration constants. The sens- ing resistor could also be connected between VDD and the emitter of Q1 on Figure 25 or between the emitter of Q1 an GND on Figure 26. Interfacing To Laser Drivers In order for the MIC3000 to control the modulation current of the laser diode, an interface circuit may be required depend- ing on the method used by the driver to set its modulation current level. Generally, most laser diode driver ICs use one of three methods: a) A current, ISET, is sourced into a pin on the driver IC. The modulation current delivered by the driver is then some fixed multiple of ISET. The SY88912 is an example of this type of driver. A simple circuit can be used to create a current source controlled by the VMOD outputs. The circuit is based on an external bipolar transistor and a current sensing resistor. |
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