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SST89C54 Datasheet(PDF) 22 Page - Silicon Storage Technology, Inc

Part # SST89C54
Description  FlashFlex51 MCU
PDF  50 Pages
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Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST89C54 Datasheet(HTML) 22 Page - Silicon Storage Technology, Inc

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© 2000 Silicon Storage Technology, Inc.
344-2 8/00
FlashFlex51 MCU
SST89C54 / SST89C58
Preliminary Specifications
Flash Memory Programming with External Host Mode (Figures 10-16)
FIGURE 10: READ-ID
Read chip signature and identification registers at the addressed location.
Flash Operation Status Detection (Ext. Host
Handshake)
The SST89C54/58 provide two firmware means for an
external host to detect the completion of a flash memory
operation to optimize the Program or Erase time. The
end of a flash memory operation cycle (Erase or Pro-
gram) can be detected by: 1) monitoring the Ready/
Busy# bit at P3[3]; 2) monitoring the Data# Polling bit at
P0[7] and P0[3].
Ready/Busy# (P3[3])
The progress of the flash memory programming can be
monitored by the Ready/Busy# output signal. P3[3] is
driven low, some time after ALE/PROG# goes low during
a flash memory operation to indicate the Busy# status of
the Flash Control Unit (FCU). P3[3] is driven high when
the Flash programming operation is completed to indi-
cate the Ready status.
During a Burst-Program operation, P3[3] is driven high
(Ready) in between each byte-programmed among the
burst to indicate the ready status to receive the next byte.
When the external host detects the Ready status after a
byte among the burst is programmed, it shall then put the
data/address (within the same page) of the next byte on
the bus and drive ALE/PROG# low (pulse), before the
time-out limit expires. See Table 7 for details. Burst-
Program command presented after time-out will wait
until next cycle. Therefore, it will have longer program-
ming time.
Data# Polling (P0[7] & P0[3]
During a Program operation, any attempts to read (Byte-
Verify), while the device is busy, will receive the comple-
ment of the data of the last byte loaded (logic low, i.e. “0”
for an erase) on P0[3] and P0[7] with the rest of the bits
“0”. During a Program operation, the Byte-Verify com-
mand is reading the data of the last byte loaded, not the
data at the address specified.
The true data will be read from P0[7], when the device
completes each byte programmed among the burst to
indicate the Ready status to receive the next byte. When
the external host detects the Ready status after a byte
among the burst is programmed, it should then put the
data/address (in the same page) of the next byte on the
bus and drive ALE/PROG# low immediately, before the
time-out limit expires (See programming time spec. in
Table 7 for details.). The true data will be read from P0[3],
when the Burst-Program command is terminated and the
device is ready for the next operation.
The termination of the Burst-Program can be accom-
plished by: 1) Change to a new X-Addresses (Note: the
X-Address range are different for the 4Kx8 flash Block 1
and for the 16/32K x 8 flash Block 0.); 2) Change to a new
command that requires a high to low transition of the ALE/
PROG# (i.e. any Erase or Program command); 3) Wait
for time out limit expires (20 µs); when programming the
next byte.
344 ILL F02.5
0030h
TSU
TES
RST
PSEN#
ALE/PROG#
EA#
P3[5:4] ,P2[5:0] ,P1
P2[7:6] ,P3[7:6]
P0
0000b
TRD
BFh
0031h
0000b
TRD
E4h/E2h



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