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RT9595 Datasheet(PDF) 4 Page - Richtek Technology Corporation |
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RT9595 Datasheet(HTML) 4 Page - Richtek Technology Corporation |
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4 / 9 page ![]() RT9595 4 DS9595-04 March 2012 www.richtek.com © Copyright 2012 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation. Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect device reliability. Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is measured at the exposed pad of the package. Note 3. Devices are ESD sensitive. Handling precaution is recommended. Note 4. The device is not guaranteed to function outside its operating conditions. Electrical Characteristics (VDD = 3.3V, TA = 25 °C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VDD Operating Voltage VDD 2.9 -- 5.5 V Switch Off Current IVDD_SW_OFF VFB = 1.1V -- 1 10 μA Shutdown Current IOFF CHARGE pin = 0V -- 0.01 1 μA FB Voltage VFB 0.985 1 1.015 V Line Regulation | ΔVFB | 2.9V < VDD < 5.5V -- -- 10 mV STAT Open Drain RDS(ON) -- 11 19 Ω Charge Enable High VCEH 1.3 -- -- V Charge Enable Low VCEL -- -- 0.4 V Built-In N-Channel Enhancement MOSFET Drain-Source On-Resistance RDS(ON) VDD = 3.3V, ID = 10mA -- 0.3 0.4 Ω Maximum Off Time During Pre-Charge -- 9 -- μs Minimum Off Time -- 400 -- ns IGBT Driver DRVIN Trip Point 0.8 1.5 2.4 V DRVOUT On Resistance to VDD VDD = 3.3V -- 6 -- Ω DRVOUT On Resistance to GND VDD = 3.3V -- 11 -- Ω Propagation Delay (Rising) -- 20 -- ns Propagation Delay (Falling) -- 200 -- ns |
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