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RT9595 Datasheet(PDF) 4 Page - Richtek Technology Corporation

Part # RT9595
Description  MOSFET Integrated Smart Photoflash Capacitor Charger with IGBT Driver
PDF  9 Pages
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Manufacturer  RICHTEK [Richtek Technology Corporation]
Direct Link  http://www.richtek.com
Logo RICHTEK - Richtek Technology Corporation

RT9595 Datasheet(HTML) 4 Page - Richtek Technology Corporation

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RT9595
4
DS9595-04
March 2012
www.richtek.com
©
Copyright
2012 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
Note 1. Stresses beyond those listed
“Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2.
θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Electrical Characteristics
(VDD = 3.3V, TA = 25
°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VDD Operating Voltage
VDD
2.9
--
5.5
V
Switch Off Current
IVDD_SW_OFF
VFB = 1.1V
--
1
10
μA
Shutdown Current
IOFF
CHARGE pin = 0V
--
0.01
1
μA
FB Voltage
VFB
0.985
1
1.015
V
Line Regulation
|
ΔVFB |
2.9V < VDD < 5.5V
--
--
10
mV
STAT Open Drain RDS(ON)
--
11
19
Ω
Charge Enable High
VCEH
1.3
--
--
V
Charge Enable Low
VCEL
--
--
0.4
V
Built-In N-Channel Enhancement MOSFET
Drain-Source On-Resistance
RDS(ON)
VDD = 3.3V, ID = 10mA
--
0.3
0.4
Ω
Maximum Off Time During
Pre-Charge
--
9
--
μs
Minimum Off Time
--
400
--
ns
IGBT Driver
DRVIN Trip Point
0.8
1.5
2.4
V
DRVOUT On Resistance to VDD
VDD = 3.3V
--
6
--
Ω
DRVOUT On Resistance to GND
VDD = 3.3V
--
11
--
Ω
Propagation Delay (Rising)
--
20
--
ns
Propagation Delay (Falling)
--
200
--
ns



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