AD7750 datasheet(3/16 Pages) AD

3 / 16 page

–3–

REV. 0

AD7750

ORDERING GUIDE

Temperature

Package

Model

Range

Description

Options

AD7750AN

–40

°C to +85°C

20-Lead Plastic DIP

N-20

AD7750AR

–40

°C to +85°C

20-Lead Wide Body SOIC

R-20

A Version

–40 C to

Parameter

+85 C

Units

Test Conditions/Comments

POWER SUPPLY

For Specified Performance, Digital Input @ AGND

or VDD

VDD

4.75

V min

5 V – 5%

5.25

V max

5 V + 5%

IDD

5.5

mA max

Typically 3.5 mA

NOTES

1See plots in Typical Performance Graphs.

2External current amplification/drive should be used if higher current source and sink capabilities are required, e.g., bipolar transistor.

All specifications subject to change without notice.

TIMING CHARACTERISTICS1, 2

Parameter

A Version

Units

Test Conditions/Comments

275

F1 and F2 Pulsewidth (Logic Low)

See Table I

Output Pulse Period. See Table I to Determine the Output Frequency

t2/2

Time Between F1 Falling Edge and F2 Falling Edge

FOUT Pulsewidth (Logic High)

See Table I

FOUT Pulse Period. See Table I to Determine the Output Frequency

CLKIN/4

Minimum Time Between F1 and F2 Pulse

NOTES

1Sample tested during initial release and after any redesign or process change that may affect this parameter.

2See Figure 18.

3The pulsewidths of F1, F2 and F

OUT are not fixed for higher output frequencies. See the Digital-to-Frequency Converter (DTF) section for an explanation.

Specifications subject to change without notice.

(VDD = 5 V, AGND = 0 V, DVDD = 0 V, REFIN = REFOUT. All specifications TMIN to TMAX

unless otherwise noted.)

ABSOLUTE MAXIMUM RATINGS*

(TA = +25

°C unless otherwise noted)

VDD to AGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V

VDD to DGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V

Analog Input Voltage to AGND

V1+, V1–, V2+ and V2– . . . . . . . . . . . . . . . . . . . . –6 V to +6 V

Reference Input Voltage to AGND . . . . –0.3 V to VDD + 0.3 V

Digital Input Voltage to DGND . . . . . . –0.3 V to VDD + 0.3 V

Digital Output Voltage to DGND . . . . . –0.3 V to VDD + 0.3 V

Operating Temperature Range

Commercial (A Version) . . . . . . . . . . . . . . . –40

°C to +85°C

Storage Temperature Range . . . . . . . . . . . . –65

°C to +150°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150

°C

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the AD7750 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

20-Lead SOIC Package, Power Dissipation . . . . . . . . 450 mW

JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . .

°C/W

Lead Temperature, Soldering

Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . +215

°C

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . +220

°C

20-Lead Plastic DIP, Power Dissipation . . . . . . . . . . 450 mW

JA Thermal Impedance . . . . . . . . . . . . . . . . . . . .

102

°C/W

Lead Temperature, Soldering

Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . +215

°C

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . +220

°C

*Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the

device at these or any other conditions above those listed in the operational

sections of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

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