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OPA2180 Datasheet(PDF) 2 Page - Texas Instruments |
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OPA2180 Datasheet(HTML) 2 Page - Texas Instruments |
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2 / 27 page ![]() OPA2180 OPA4180 SBOS584C – NOVEMBER 2011 – REVISED DECEMBER 2012 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE INFORMATION(1) PACKAGE SPECIFIED PACKAGE-LEAD DESIGNATOR TEMPERATURE RANGE PACKAGE MARKING DUAL SO-8 D –40°C to +105°C 2180 OPA2180 MSOP-8 DGK –40°C to +105°C 2180 QUAD SO-14 D –40°C to +105°C OPA4180 OPA4180 TSSOP-14 PW –40°C to +105°C OPA4180 (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the device product folder at www.ti.com. ABSOLUTE MAXIMUM RATINGS (1) OPA2180, OPA4180 UNIT Supply voltage ±20, 40 (single supply) V Voltage (V–) – 0.5 to (V+) + 0.5 V Signal input terminals Current ±10 mA Output short-circuit(2) Continuous Operating temperature –55 to +125 °C Storage temperature –65 to +150 °C Junction temperature +150 °C Human body model (HBM) 1.5 kV ESD ratings Charged device model (CDM) 1 kV (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only and functional operation of the device at these or any other conditions beyond those specified is not implied. (2) Short-circuit to ground, one amplifier per package. 2 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated Product Folder Links: OPA2180 OPA4180 |
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