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EP3C80 Datasheet(PDF) 154 Page - Altera Corporation |
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EP3C80 Datasheet(HTML) 154 Page - Altera Corporation |
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154 / 274 page ![]() 8–12 Chapter 8: External Memory Interfaces in the Cyclone III Device Family Cyclone III Device Family Memory Interfaces Features Cyclone III Device Handbook July 2012 Altera Corporation Volume 1 DDR Output Registers A dedicated write DDIO block is implemented in the DDR output and output enable paths. Figure 8–5 shows how Cyclone III device family dedicated write DDIO block is implemented in the I/O element (IOE) registers. The two DDR output registers are located in the I/O element (IOE) block. Two serial data streams routed through datain_l and datain_h, are fed into two registers, output register Ao and output register Bo, respectively, on the same clock edge. The output from output register Ao is captured on the falling edge of the clock, while the output from output register Bo is captured on the rising edge of the clock. The registered outputs are multiplexed by the common clock to drive the DDR output pin at twice the data rate. The DDR output enable path has a similar structure to the DDR output path in the IOE block. The second output enable register provides the write preamble for the DQS strobe in DDR external memory interfaces. This active-low output enable register extends the high-impedance state of the pin by half a clock cycle to provide the external memory’s DQS write preamble time specification. Figure 8–5. Cyclone III Device Family Dedicated Write DDIO IOE Register IOE Register Output Enable -90° Shifted Clock datain_l Output Enable Register A OE Output Enable Register B OE data1 data0 IOE Register Output Register A O data0 data1 datain_h IOE Register Output Register B O DDR Output Registers DDR Output Enable Registers DQ or DQS ® |
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