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OPA659 Datasheet(PDF) 12 Page - National Semiconductor (TI) |
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OPA659 Datasheet(HTML) 12 Page - National Semiconductor (TI) |
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12 / 32 page ![]() APPLICATION INFORMATION Wideband, Noninverting Operation OPA659 R OUT 0.1 F m 10 F m 0.1 F m 10 F m 50 Load W 50 Source W R T R G V IN V OUT R F +6V - 6V OPA659 R OUT 0.1 F m 10 F m 0.1 F m 10 F m 50 Load W 50 Source W R T V IN V OUT +6V - 6V OPA659 SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ............................................................................................................................................ www.ti.com Voltage-feedback op amps can use a wide range of resistor values to set the gain. To retain a controlled The OPA659 is a very broadband, unity-gain stable, frequency response for the noninverting voltage voltage-feedback amplifier with a high impedance amplifier of Figure 35, the parallel combination of RF JFET-input stage. Its very high gain bandwidth || RG should always be less than 200Ω. In the product (GBP) of 350MHz can be used to either noninverting configuration, the parallel combination of deliver high signal bandwidths for low-gain buffers, or RF || RG forms a pole with the parasitic input and to deliver broadband, low-noise, transimpedance board layout capacitance at the inverting input of the bandwidth to photodiode-detector applications. The OPA659. For best performance, this pole should be OPA659 is designed to to provide very low distortion at a frequency greater than the closed-loop and accurate pulse response with low overshoot and bandwidth for the OPA659. For this reason, a direct ringing. To achieve the full performance of the short from the output to the inverting input is OPA659, careful attention to printed circuit board recommended for the unity-gain follower application. (PCB) layout and component selection are required, Table 1 lists several recommended resistor values for as discussed in the remaining sections of this data noninverting gains with a 50 Ω input/output match. sheet. Figure 34 shows the noninverting gain of +1 circuit; Figure 35 shows the more general circuit used for other noninverting gains. These circuits are used as the basis for most of the noninverting gain Typical Characteristics graphs. Most of the graphs were characterized using signal sources with 50 Ω driving impedance, and with measurement equipment presenting a 50 Ω load impedance. In Figure 34, the shunt resistor RT at VIN should be set to 50Ω to match the source impedance of the test generator and cable, while the series output resistor, ROUT, at VOUT should also be set to 50Ω to provide matching impedance for the measurement equipment load and cable. Generally, data sheet voltage swing Figure 35. General Noninverting Test Circuit specifications are measured at the output pin, VOUT, in Figure 34 and Figure 35. Table 1. Resistor Values for Noninverting Gains with 50 Ω Input/Output Match NONINVERTING GAIN RF RG RT ROUT +1 0 Open 49.9 49.9 +2 249 249 49.9 49.9 +5 249 61.9 49.9 49.9 +10 249 27.4 49.9 49.9 Figure 34. Noninverting Gain of +1 Test Circuit 12 Submit Documentation Feedback Copyright © 2008–2009, Texas Instruments Incorporated Product Folder Link(s): OPA659 |
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