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800FB Datasheet(PDF) 32 Page - Numonyx B.V

Part # 800FB
Description  Top / Bottom Boot Block 5 V Supply Flash Memory
PDF  67 Pages
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

800FB Datasheet(HTML) 32 Page - Numonyx B.V

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Command Interface
M29FxxxFT, M29FxxxFB
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Table 6.
Program/Erase Times and Program/Erase Endurance Cycles, M29F160F
Typical values are measured at room temperature and nominal voltages; typical and maximum values are samples, not 100%
tested.
Chip Erase, Program, and Chip Program parameters: Maximum value measured at worst case conditions for both temperature
and VCC after 100,000 program/erase cycles.
Block Erase and Erase Suspend Latency parameters: Maximum value measured at worst case conditions for both temperature
and VCC.
Table 7.
Program/Erase Times and Program/Erase Endurance Cycles, M29F800F
Typical values are measured at room temperature and nominal voltages; typical and maximum values are samples, not 100%
tested.
Chip Erase, Program, and Chip Program parameters: Maximum value measured at worst case conditions for both temperature
and VCC after 100,000 program/erase cycles.
Block Erase and Erase Suspend Latency parameter: Maximum value measured at worst case conditions for both temperature
and VCC.
Parameter
Min
Typical
Max
Unit
Chip Erase
—
25
120
s
Block Erase (64 KBytes)
—
0.8
6
s
Erase Suspend Latency Time
—
20
25
µs
Program (Byte or Word)
—
11
200
µs
Chip Program (Byte by Byte)
—
24
120
s
Chip Program (Word by Word)
—
12
60
s
Program/Erase Cycles (per Block)
100,000
—
—
cycles
Data Retention
20
—
—
years
Parameter
Min
Typical
Max
Unit
Chip Erase
—
12
60
s
Block Erase (64 KBytes)
—
0.8
6
s
Erase Suspend Latency Time
—
20
25
µs
Program (Byte or Word)
—
11
200
µs
Chip Program (Byte by Byte)
—
12
—
s
Chip Program (Word by Word)
—
6
30
s
Program/Erase Cycles (per Block)
100,000
—
—
cycles
Data Retention
20
—
—
years



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