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DS1820 Datasheet(PDF) 2 Page - Dallas Semiconductor |
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DS1820 Datasheet(HTML) 2 Page - Dallas Semiconductor |
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2 / 27 page ![]() DS1820 030598 2/27 DETAILED PIN DESCRIPTION PIN 16–PIN SSOP PIN PR35 SYMBOL DESCRIPTION 9 1 GND Ground. 8 2 DQ Data Input/Output pin. For 1–Wire operation: Open drain. (See “Parasite Power” section.) 7 3 VDD Optional VDD pin. See “Parasite Power” section for details of connection. DS1820S (16–pin SSOP): All pins not specified in this table are not to be connected. OVERVIEW The block diagram of Figure 1 shows the major compo- nents of the DS1820. The DS1820 has three main data components: 1) 64–bit lasered ROM, 2) temperature sensor, and 3) nonvolatile temperature alarm triggers TH and TL. The device derives its power from the 1–Wire communication line by storing energy on an internal capacitor during periods of time when the signal line is high and continues to operate off this power source during the low times of the 1–Wire line until it returns high to replenish the parasite (capacitor) supply. As an alternative, the DS1820 may also be powered from an external 5 volts supply. Communication to the DS1820 is via a 1–Wire port. With the 1–Wire port, the memory and control functions will not be available before the ROM function protocol has been established. The master must first provide one of five ROM function commands: 1) Read ROM, 2) Match ROM, 3) Search ROM, 4) Skip ROM, or 5) Alarm Search. These commands operate on the 64–bit lasered ROM portion of each device and can single out a specific device if many are present on the 1–Wire line as well as indicate to the Bus Master how many and what types of devices are present. After a ROM function sequence has been successfully executed, the memory and control functions are accessible and the master may then provide any one of the six memory and control function commands. One control function command instructs the DS1820 to perform a temperature measurement. The result of this measurement will be placed in the DS1820’s scratch- pad memory, and may be read by issuing a memory function command which reads the contents of the scratchpad memory. The temperature alarm triggers TH and TL consist of one byte EEPROM each. If the alarm search command is not applied to the DS1820, these registers may be used as general purpose user memory. Writing TH and TL is done using a memory function command. Read access to these registers is through the scratchpad. All data is read and written least significant bit first. DS1820 BLOCK DIAGRAM Figure 1 64–BIT ROM SCRATCHPAD MEMORY AND CONTROL LOGIC AND 1–WIRE PORT TEMPERATURE SENSOR 8–BIT CRC GENERATOR POWER SUPPLY SENSE DQ VDD INTERNAL VDD HIGH TEMPERATURE TRIGGER, TH LOW TEMPERATURE TRIGGER, TL |
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