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GMS90C51 Datasheet(PDF) 43 Page - Hynix Semiconductor |
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GMS90C51 Datasheet(HTML) 43 Page - Hynix Semiconductor |
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43 / 59 page ![]() GMS90 Series Dec. 1998 Ver 3.0 39 AC Characteristics for GMS90 series (33MHz) External Data Memory Characteristics Advance Information (33MHz) External Clock Drive Parameter Symbol 33 MHz Oscillator Variable Oscillator 1/tCLCL = 3.5 to 33MHz Unit Min. Max. Min. Max. RD pulse width tRLRH 132 - 6tCLCL-50 - ns WR pulse width tWLWH 132 - 6tCLCL-50 - ns Address hold after ALE tLLAX2 10 - tCLCL-20 - ns RD to valid data in tRLDV -81 - 5tCLCL-70 ns Data hold after RD tRHDX 0- 0 - ns Data float after RD tRHDZ -46 - 2tCLCL-15 ns ALE to valid data in tLLDV -153 - 8tCLCL-90 ns Address to valid data in tAVDV -183 - 9tCLCL-90 ns ALE to WR or RD tLLWL 71 111 3tCLCL-20 3tCLCL+20 ns Address valid to WR or RD tAVWL 66 - 4tCLCL-55 - ns WR or RD high to ALE high tWHLH 10 40 tCLCL-20 tCLCL+20 ns Data valid to WR transition tQVWX 5- tCLCL-25 - ns Data setup before WR tQVWH 142 - 7tCLCL-70 - ns Data hold after WR tWHQX 10 - tCLCL-20 - ns Address float after RD tRLAZ -0 - 0 ns Parameter Symbol Variable Oscillator (Freq. = 3.5 to 24MHz) Unit Min. Max. Oscillator period tCLCL 30.3 285.7 ns High time tCHCX 11.5 tCLCL - tCLCX ns Low time tCLCX 11.5 tCLCL - tCHCX ns Rise time tCLCH -5 ns Fall time tCHCL -5 ns |
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