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changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata

November 1995

COPYRIGHT

INTEL CORPORATION 1995

Order Number 290207-010

28F010

1024K (128K x 8) CMOS FLASH MEMORY

Y

Flash Electrical Chip-Erase

1 Second Typical Chip-Erase

Y

Quick Pulse Programming Algorithm

10 ms Typical Byte-Program

2 Second Chip-Program

Y

100000 EraseProgram Cycles

Y

Y

High-Performance Read

65 ns Maximum Access Time

Y

CMOS Low Power Consumption

10 mA Typical Active Current

50 mA Typical Standby Current

0 Watts Data Retention Power

Y

Integrated ProgramErase Stop Timer

Y

Command Register Architecture for

MicroprocessorMicrocontroller

Compatible Write Interface

Y

Noise Immunity Features

g

Maximum Latch-Up Immunity

through EPI Processing

Y

EPROM-Compatible Process Base

High-Volume Manufacturing

Experience

Y

JEDEC-Standard Pinouts

32-Pin Plastic Dip

32-Lead PLCC

32-Lead TSOP

(See Packaging Spec Order

231369)

Y

Extended Temperature Options

Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for readwrite

random access nonvolatile memory The 28F010 adds electrical chip-erasure and reprogramming to familiar

EPROM technology Memory contents can be rewritten in a test socket in a PROM-programmer socket on-

board during subassembly test in-system during final test and in-system after-sale The 28F010 increases

memory flexibility while contributing to time and cost savings

The 28F010 is a 1024 kilobit nonvolatile memory organized as 131072 bytes of 8 bits Intel’s 28F010 is

offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages Pin assignments conform to JEDEC

standards for byte-wide EPROMs

Extended erase and program cycling capability is designed into Intel’s ETOX (EPROM Tunnel Oxide) process

technology Advanced oxide processing an optimized tunneling structure and lower electric field combine to

100000 erase and program cycles well within the time limits of the Quick Pulse Programming and Quick Erase

algorithms

Intel’s 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds low

power consumption and immunity to noise Its 65 nanosecond access time provides no-WAIT-state perform-

ance for a wide range of microprocessors and microcontrollers Maximum standby current of 100 mA trans-

lates into power savings when the device is deselected Finally the highest degree of latch-up protection is

achieved through Intel’s unique EPI processing Prevention of latch-up is provided for stresses up to 100 mA

With Intel’s ETOX process base the 28F010 builds on years of EPROM experience to yield the highest levels

of quality reliability and cost-effectiveness