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28F010 Datasheet(PDF) 16 Page - Intel Corporation

Part # 28F010
Description  1024K (128K x 8) CMOS FLASH MEMORY
PDF  30 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

28F010 Datasheet(HTML) 16 Page - Intel Corporation

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28F010
DC CHARACTERISTICSCMOS COMPATIBLECommercial Products (Continued)
Symbol
Parameter
Notes
Limits
Unit
Test Conditions
Min
Typical(4)
Max
ICC2
VCC Programming Current
1 2
10
10
mA
Programming in Progress
ICC3
VCC Erase Current
1 2
50
15
mA
Erasure in Progress
ICC4
VCC Program Verify Current
1 2
50
15
mA
VPP e VPPH Program
Verify in Progress
ICC5
VCC Erase Verify Current
1 2
50
15
mA
VPP e VPPH Erase
Verify in Progress
IPPS
VPP Leakage Current
1
g
10
m
AVPP s VCC
IPP1
VPP Read Current ID
1
90
200
m
AVPP l VCC
Current or Standby Current
g
10
VPP s VCC
IPP2
VPP Programming
1 2
80
30
mA
VPP e VPPH
Current
Programming in Progress
IPP3
VPP Erase Current
1 2
60
30
mA
VPP e VPPH
Erasure in Progress
IPP4
VPP Program Verify
1 2
20
50
mA
VPP e VPPH Program
Current
Verify in Progress
IPP5
VPP Erase Verify
1 2
20
50
mA
VPP e VPPH Erase
Current
Verify in Progress
VIL
Input Low Voltage
b
05
08
V
VIH
Input High Voltage
07 VCC
VCC a 05
V
VOL
Output Low Voltage
045
V
VCC e VCC Min
IOL e 58 mA
VOH1
Output High Voltage
085 VCC
V
VCC e VCC Min IOH eb25 mA
VOH2
VCC b 04
VCC e VCC Min IOH eb100 mA
VID
A9 Intelligent Identifier
1150
1300
V
Voltage
IID
A9 Intelligent Identifier
1 2
90
200
m
AA9 e VID
Current
VPPL
VPP during Read-Only
000
65
V
NOTE
ErasePrograms are
Operations
Inhibited when VPP e VPPL
VPPH
VPP during ReadWrite
1140
1260
V
Operations
VLKO
VCC EraseWrite Lock
25
V
Voltage
16



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