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28F020 Datasheet(PDF) 11 Page - Intel Corporation

Part # 28F020
Description  28F020 2048K (256K X 8) CMOS FLASH MEMORY
PDF  38 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

28F020 Datasheet(HTML) 11 Page - Intel Corporation

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E
28F020
11
Table 3. Command Definitions
Command
Bus
Cycles
Req’d
First Bus Cycle
Second Bus Cycle
Operation(1)
Address(2)
Data(3)
Operation(1)
Address(2)
Data(3)
Read Memory
1
Write
X
00H
Read Intelligent
Identifier Codes(4)
3
Write
IA
90H
Read
IA
ID
Set-Up
Erase/Erase(5)
2
Write
X
20H
Write
X
20H
Erase Verify(5)
2
Write
EA
A0H
Read
X
EVD
Set-Up Program/
Program(6)
2
Write
X
40H
Write
PA
PD
Program Verify(6)
2
Write
X
C0H
Read
X
PVD
Reset(7)
2
Write
X
FFH
Write
X
FFH
NOTES:
1.
Bus operations are defined in Table 2.
2.
IA = Identifier address: 00H for manufacturer code, 01H for device code.
EA = Erase Address: Address of memory location to be read during erase verify.
PA = Program Address: Address of memory location to be programmed.
Addresses are latched on the falling edge of the Write-Enable pulse.
3.
ID = Identifier Address: Data read from location IA during device identification (Mfr = 89H, Device = BDH).
EVD = Erase Verify Data: Data read from location EA during erase verify.
PD = Program Data: Data to be programmed at location PA. Data is latched on the rising edge of Write-Enable.
PVD = Program Verify Data: Data read from location PA during program verify. PA is latched on the Program command.
4.
Following the Read Intelligent ID command, two read operations access manufacturer and device codes.
5.
Figure 5 illustrates the
28F020 Quick-Erase Algorithm flowchart.
6.
Figure 4 illustrates the
28F020 Quick-Pulse Programming Algorithm flowchart.
7.
The second bus cycle must be followed by the desired command register write.
2.2.2.1
Read Command
While VPP is high, for erasure and programming,
memory contents can be accessed via the Read
command. The read operation is initiated by writing
00H into the command register. Microprocessor
read cycles retrieve array data. The device remains
enabled for reads until the command register
contents are altered.
The default contents of the register upon VPP
power-up is 00H. This default value ensures that
no spurious alteration of memory contents occurs
during the VPP power transition. Where the VPP
supply is hardwired to the 28F020, the device
powers-up and remains enabled for reads until the
command register contents are changed. Refer to
the
AC Characteristics—Read-Only Operations
and waveforms for specific timing parameters.
2.2.2.2
Intelligent Identifier Command
Flash
memories
are
intended
for
use
in
applications where the local CPU alters memory
contents. As such, manufacturer and device codes
must be accessible while the device resides in the
target
system.
PROM
programmers
typically
access signature codes by raising A9 to a high
voltage. However, multiplexing high voltage onto
address lines is not a desired system design
practice.



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