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28F020 Datasheet(PDF) 31 Page - Intel Corporation

Part # 28F020
Description  28F020 2048K (256K X 8) CMOS FLASH MEMORY
PDF  38 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

28F020 Datasheet(HTML) 31 Page - Intel Corporation

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28F020
31
NOTES:
1.
Read timing characteristics during read/write operations are the same as during read-only operations. Refer to
AC
Characteristics for Read-Only Operations.
2.
Guaranteed by design.
3.
The integrated stop timer terminates the programming/erase operations, thus eliminating the need for a maximum
specification.
4.
See
High Speed AC Testing Input/Output Waveform (Figure 8) and High Speed AC Testing Load Circuit (Figure 9) for
testing characteristics.
5.
Minimum Specification for Extended Temperature product.
6.
See
Testing Input/Output Waveform (Figure 6) and AC Testing Load Circuit (Figure 7) for testing characteristics.
4.10
Erase and Programming Performance
Limits
Parameter
Notes
Min
Typ
Max
Unit
Chip-Erase Time
1, 3, 4
2
30
Sec
Chip-Program Time
1, 2, 4
4
25
Sec
NOTES:
1.
“Typicals” are not guaranteed, but based on a limited number of samples from production lots. Data taken at 25 °C, 12.0 V
VPP at 0 cycles.
2.
Minimum byte programming time excluding system overhead is 16 µsec (10 µsec program + 6 µsec write recovery), while
maximum is 400 µsec/byte (16 µsec x 25 loops allowed by algorithm). Max chip-programming time is specified lower than
the worst case allowed by the programming algorithm since most bytes program significantly faster than the worst case
byte.
3.
Excludes 00H programming prior to erasure.
4.
Excludes System-Level Overhead.



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