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28F020 Datasheet(PDF) 15 Page - Intel Corporation

Part # 28F020
Description  28F020 2048K (256K X 8) CMOS FLASH MEMORY
PDF  38 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

28F020 Datasheet(HTML) 15 Page - Intel Corporation

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E
28F020
15
Start Erasure (4)
Data = 00H?
Program All
Bytes to 00H
Apply V
PPH
(1)
ADDR = 00H
PLSCNT = 0
Time Out 10 ms
Time Out 6 µs
Read Data
from Device
Data = FFH?
Inc
PLSCNT =
1000?
Last Address?
Erasure
Completed
Erase Error
Write Erase
Set-Up Cmd
Write Erase Cmd
Write Read Cmd
Apply V
PPL
(1)
Apply V
PPL
(1)
Write Erase
Verify Cmd
Increment Addr
Y
Bus
Operation
Comments
Entire Memory Must = 00H
Before Erasure
Use Quick-Pulse
Programming Algorithm
(Figure 4)
Standby
Wait for V
PP Ramp to VPPH
(1)
Initialize Addresses and
Pulse-Count
Write
Data = 20H
Write
Data = 20H
Stand-by
Duration of Erase Operation
(t
WHWH2 )
Write
Addr = Byte to Verify;
Data = A0H; Stops Erase
Operation(3)
Standby
t
WHGL
Read
Read Byte to Verify Erasure
Standby
Compare Output to FFH
Increment Pulse-Count
Standby
Wait for V
PP Ramp to VPPL
(1)
N
Y
N
N
N
Y
Y
Command
Set-Up
Erase
Erase
Erase (2)
Verify
Write
Data = 00H, Resets the
Register for Read Operations
Read
0245_05
NOTES:
1.
See
DC Characteristics for the value of VPPH and VPPL.
2.
Erase Verify is performed only after chip-erasure. A final read/compare may be performed (optional) after the register is
written with the Read command.
3.
Refer of
Principles of Operation.
4.
Caution: The algorithm must be followed to ensure proper and reliable operation of the device.
Figure 5. 28F020 Quick-Erase Algorithm



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