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28F008SA Datasheet(PDF) 8 Page - Intel Corporation |
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28F008SA Datasheet(HTML) 8 Page - Intel Corporation |
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8 / 26 page ![]() VE28F008 Table 3 Command Definitions Command Cycles Req’d Bus Notes First Bus Cycle Second Bus Cycle Operation Address Data Operation Address Data Read ArrayReset 1 1 Write X FFH Intelligent Identifier 3 2 3 4 Write X 90H Read IA IID Read Status Register 2 3 Write X 70H Read X SRD Clear Status Register 1 Write X 50H Erase SetupErase Confirm 2 2 Write BA 20H Write BA D0H Erase SuspendErase Resume 2 Write X B0H Write X D0H Byte Write SetupWrite 2 2 3 5 Write WA 40H Write WA WD Alternate Byte Write SetupWrite 2 2 3 5 Write WA 10H Write WA WD NOTES 1 Bus operations are defined in Table 2 2 IA e Identifier Address 00H for manufacturer code 01H for device code BA e Address within the block being erased WA e Address of memory location to be written 3 SRD e Data read from Status Register See Table 4 for a description of the Status Register bits WD e Data to be written at location WA Data is latched on the rising edge of WE IID e Data read from intelligent identifiers 4 Following the intelligent identifier command two read operations access manufacture and device codes 5 Either 40H or 10H are recognized by the WSM as the Byte Write Setup command 6 Commands other than those shown above are reserved by Intel for future device implementations and should not be used Write Writes to the Command User Interface enable read- ing of device data and intelligent identifier They also control inspection and clearing of the Status Regis- ter Additionally when VPP e VPPH the Command User Interface controls block erasure and byte write The contents of the interface register serve as input to the internal write state machine The Command User Interface itself does not occupy an addressable memory location The interface reg- ister is a latch used to store the command and ad- dress and data information needed to execute the command Erase Setup and Erase Confirm com- mands require both appropriate command data and an address within the block to be erased The Byte Write Setup command requires both appropriate command data and the address of the location to be written while the Byte Write command consists of the data to be written and the address of the loca- tion to be written The Command User Interface is written by bringing WE to a logic-low level (VIL) while CE is low Ad- dresses and data are latched on the rising edge of WE Standard microprocessor write timings are used Refer to AC Write Characteristics and the AC Wave- forms for Write Operations Figure 9 for specific tim- ing parameters COMMAND DEFINITIONS When VPPL is applied to the VPP pin read opera- tions from the Status Register intelligent identifier or array blocks are enabled Placing VPPH on VPP enables successful byte write and block erase oper- ations as well Device operations are selected by writing specific commands into the Command User Interface Table 3 defines the VE28F008 commands Read Array Command Upon initial device powerup and after exit from deep powerdown mode the VE28F008 defaults to Read Array mode This operation is also initiated by writing FFH into the Command User Interface Microproces- sor read cycles retrieve array data The device re- mains enabled for reads until the Command User Interface contents are altered Once the internal Write State Machine has started a block erase or byte write operation the device will not recognize 8 |
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