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AP1021 Datasheet(PDF) 7 Page - Asahi Kasei Microsystems |
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AP1021 Datasheet(HTML) 7 Page - Asahi Kasei Microsystems |
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7 / 24 page ![]() [AP1021] 015000428-E-00 2015/01 - 7 - 9. Electrical Characteristics (Ta = 25C, VM=24V, VC = 5.0V, unless otherwise specified.) Parameter Symbol Conditions min typ max Unit Quiescent current VC Quiescent current at OFF IVCOFF EN=”L” - - 10 A VM Quiescent current at OFF IVMOFF EN=”L” - - 20 A VC Quiescent current at operate IVC EN=”H” SCK = 2MHz Current data increment speed = 1kHz - 1.6 3.0 mA H-bridge circuit Driver on resistance (High side + Low side) RON1 Iload 1ch/2ch = 100mA/100mA Ta = 25C - 1.0 1.3 Ω Body diode forward voltage VF IF = 100mA - 0.8 1.2 V Control logic Input High level voltage VIH VC = 3.0V-5.5V 0.7xVC - - V Input Low level voltage VIL - - 0.3xVC V Input pulse rise time (OE12, OE34 pin) tR - - 1.0 s Input pulse fall time (OE12, OE34 pin) tF - - 1.0 s Input High level current IIH -1.0 - 1.0 A Input High level current (EN pin) IIHEN 15 25 40 A Input Low level current IIL -1.0 - 1.0 A Reference voltage VREF terminal voltage VREF Iload = 100A 1.22 1.25 1.28 V Current operation Blanking time tB 2.4 3.0 3.6 s VIS offset voltage VOSIS -50 0 50 mV Protection circuit VC under voltage detect voltage VCUV 1.9 2.2 2.5 V Thermal shut down temperature TTSD Design certification (Note 12) 150 175 200 C Temperature hysteresis TTSDHYS Design certification (Note 12) - 30 - C Note 11. All above voltage are defined to GND. Note 12. Not tested under mass-production. |
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