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AN3994 Datasheet(PDF) 8 Page - STMicroelectronics

Part # AN3994
Description  One of the bigger challenges
PDF  53 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN3994 Datasheet(HTML) 8 Page - STMicroelectronics

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Parasitic capacitances overview
AN3994
8/53
Doc ID 022380 Rev 1
2
Parasitic capacitances overview
When dealing with high speed switching applications, the most critical MOSFET parameters
limiting its dynamic response are the parasitic capacitances.
Figure 5 shows the physical origin of the parasitic component in an N-channel Power
MOSFET:
Figure 5.
N-channel Power MOSFET structure and intrinsic capacitances
Figure 6.
Equivalent model of Power MOSFET intrinsic capacitances
Cgs is mainly due to the overlap between the gate and the source metallization (“3” and “4”
components in Figure 5 and 6). Capacitors “5” and “6” are MIS (metal-insulator-
semiconductor) capacitors between the gate and the p-body. The Cgs value is linked to the
geometry of the device and it's almost independent of the voltage applied.
AM10768v1
Source metal
Source metal
4
Intermediate dielectric
4
Intermediate dielectric
2
1
5
6
4
3
Polysilicon gate
Gate oxide
N++ source
N++ source
2
1
5
6
4
3
Polysilicon gate
Gate oxide
N++ source
N++ source
2
5
P/P+ Body
P/P+ Body
2
5
P/P+ Body
P/P+ Body
7
N- drain
7
N- drain



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