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AN4312 Datasheet(PDF) 27 Page - STMicroelectronics |
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AN4312 Datasheet(HTML) 27 Page - STMicroelectronics |
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27 / 36 page ![]() DocID024815 Rev 1 27/36 AN4312 Surface sensor design 35 If the design is done by using the charge transfer acquisition principle to have an efficient shield, its waveform must be similar to that of the touchkey. Here are some guidelines for achieving this (refer to Figure 23 and Figure 24): • The Cs/Cx of the shield should be in the same range as the Cs/Cx of the touchkeys. • Using Csshield = k.Cskey (c) usually gives good results. • The Cs of the shield does not need to be a high grade capacitor. Any type should work. • The noise/ESD protection resistor may be mandatory on the shield because it may be exposed to ESD. In order not to modify the pulse timings, the Rsshield should be in the range of Rskey/k. Figure 23. STM8L1xx driven shield example using the charge-transfer acquisition principle c. k = (shield area)/(electrode area) MS18978V3 IO4 IO1 IO2 IO3 IO4 IO3 IO2 IO1 Group 1 Group2 (Shield Group) STM8L101 Rskey Cskey Rsshield Csshield |
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