The RF TMOS

 Line

Power Field Effect Transistor

N–Channel Enhancement Mode

Designed for wideband large–signal amplifier and oscillator applications to

500 MHz.

• Guaranteed 28 Volt, 500 MHz Performance

Output Power = 2.0 Watts

Minimum Gain = 16 dB (Min)

Efficiency = 55% (Typ)

• Facilitates Manual Gain Control, ALC and Modulation

Techniques

• 100% Tested for Load Mismatch at All Phase Angles with

30:1 VSWR

• Excellent Thermal Stability, Ideally Suited for Class A

Operation

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDSS

65

Vdc

Drain–Gate Voltage (RGS = 1.0 MΩ)

VDGR

65

Vdc

Gate–Source Voltage

VGS

±20

Vdc

Drain Current — Continuous

ID

0.5

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

8.0

45

Watts

mW/

°C

Storage Temperature Range

Tstg

– 65 to +150

°C

Operating Junction Temperature

TJ

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RθJC

13.2

°C/W

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF158

To 500 MHz, 2 W, 28 V

TMOS

BROADBAND

RF POWER FET

CASE 305A–01, STYLE 2

D

S

G

Order this document

by MRF158/D

SEMICONDUCTOR TECHNICAL DATA

1

REV 9