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S8211C Datasheet(PDF) 11 Page - Seiko Instruments Inc

Part # S8211C
Description  High-accuracy voltage detection circuit
PDF  43 Pages
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Manufacturer  SII [Seiko Instruments Inc]
Direct Link  http://www.sii.co.jp
Logo SII - Seiko Instruments Inc

S8211C Datasheet(HTML) 11 Page - Seiko Instruments Inc

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BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.7_00
S-8211C Series
Seiko Instruments Inc.
11
2. Except detection delay time (Ta =
−40°C to +85°C
P
*1
P
)
Table 10
(Ta =
−40°C to +85°C
P
*1
P
unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Condition
Test
Circuit
Detection Voltage
Overcharge detection voltage
VCU
3.90 V to 4.50 V, adjustable
VCU
− 0.060
VCU
VCU
+ 0.040
V
1
1
Overcharge release voltage
VCL
3.80 V to 4.43 V,
adjustable
VCL
≠ VCU
VCL
− 0.08
VCL
VCL
+ 0.065
V
1
1
VCL = VCU
VCL
− 0.06
VCL
VCL
+ 0.04
V
1
1
Overdischarge detection voltage
VDL
2.00 V to 3.00 V, adjustable
VDL
− 0.11
VDL
VDL
+ 0.13
V
2
2
Overdischarge release voltage
VDU
2.00 V to 3.40 V,
adjustable
VDU
≠ VDL
VDU
− 0.15
VDU
VDU
+ 0.19
V
2
2
VDU = VDL
VDU
− 0.11
VDU
VDU
+ 0.13
V
2
2
Discharge overcurrent detection voltage
VDIOV
0.05 V to 0.30 V, adjustable
VDIOV
− 0.021
VDIOV
VDIOV
+ 0.024
V
3
2
Load short-circuiting detection voltage
P
*2
VSHORT
−
0.16
0.50
0.84
V
3
2
Charge overcurrent detection voltage
VCIOV
−
−0.14
− 0.1
−0.06
V
4
2
0 V Battery Charge Function
0 V battery charge starting charger voltage
V0CHA
0 V battery charge function
"available"
1.7
−
−
V
11
2
0 V battery charge inhibition battery voltage
V0INH
0 V battery charge function
"unavailable"
−
−
0.3
V
12
2
Internal Resistance
Resistance between VM pin and VDD pin
RVMD
VDD = 1.8 V, VVM = 0 V
78
300
1310
k
Ω
6
3
Resistance between VM pin and VSS pin
RVMS
VDD = 3.5 V, VVM = 1.0 V
7.2
20
44
k
Ω
6
3
Input Voltage
Operation voltage between VDD pin
and VSS pin
VDSOP1
−
1.5
−
8
V
−
−
Operation voltage between VDD pin
and VM pin
VDSOP2
−
1.5
−
28
V
−
−
Input Current (With Power-down Function)
Current consumption during operation
IOPE
VDD = 3.5 V, VVM = 0 V
0.7
3.0
6.0
μA
5
2
Current consumption during power-down
IPDN
VDD = VVM = 1.5 V
−
−
0.3
μA
5
2
Input Current (Without Power-down Function)
Current consumption during operation
IOPE
VDD = 3.5 V, VVM = 0 V
0.7
3.0
6.0
μA
5
2
Current consumption during overdischarge
IOPED
VDD = VVM = 1.5 V
0.2
2.0
3.8
μA
5
2
Output Resistance
CO pin resistance "H"
RCOH
VCO = 3.0 V, VDD = 3.5 V, VVM = 0 V
1.2
5
15
k
Ω
7
4
CO pin resistance "L"
RCOL
VCO = 0.5 V, VDD = 4.5 V, VVM = 0 V
1.2
5
15
k
Ω
7
4
DO pin resistance "H"
RDOH
VDO = 3.0 V, VDD = 3.5 V, VVM = 0 V
1.2
5
15
k
Ω
8
4
DO pin resistance "L"
RDOL
VDO = 0.5 V, VDD = VVM = 1.8 V
1.2
5
15
k
Ω
8
4
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
*2. In any conditions, load short-circuiting detection voltage (VSHORT) is higher than discharge overcurrent detection voltage
(VDIOV).



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