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S8211C Datasheet(PDF) 14 Page - Seiko Instruments Inc

Part # S8211C
Description  High-accuracy voltage detection circuit
PDF  43 Pages
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Manufacturer  SII [Seiko Instruments Inc]
Direct Link  http://www.sii.co.jp
Logo SII - Seiko Instruments Inc

S8211C Datasheet(HTML) 14 Page - Seiko Instruments Inc

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BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
Rev.7.7_00
Seiko Instruments Inc.
14
3. 5
S-8211CAF, S-8211CAO, S-8211CAP, S-8211CAQ, S-8211CBD, S-8211CBJ, S-8211CBO, S-8211CCC,
S-8211CCF, S-8211CCI, S-8211CCS, S-8211CCU, S-8211CCX, S-8211CDE, S-8211CDF, S-8211CDH,
S-8211CDI, S-8211CDK, S-8211CDL
Table 15
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Condition
Test
Circuit
Delay Time (Ta =
+25°C)
Overcharge detection delay time
tCU
−
0.96
1.2
1.4
s
9
5
Overdischarge detection delay time
tDL
−
30
38
46
ms
9
5
Discharge overcurrent detection delay time
tDIOV
−
7.2
9
11
ms
10
5
Load short-circuiting detection delay time
tSHORT
−
240
300
360
μs
10
5
Charge overcurrent detection delay time
tCIOV
−
7.2
9
11
ms
10
5
Delay Time (Ta =
−40°C to +85°C)
P
*1
Overcharge detection delay time
tCU
−
0.7
1.2
2.0
s
9
5
Overdischarge detection delay time
tDL
−
20
38
65
ms
9
5
Discharge overcurrent detection delay time
tDIOV
−
5
9
15
ms
10
5
Load short-circuiting detection delay time
tSHORT
−
150
300
540
μs
10
5
Charge overcurrent detection delay time
tCIOV
−
5
9
15
ms
10
5
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
3. 6 S-8211CAW, S-8211CDD
Table 16
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Condition
Test
Circuit
Delay Time (Ta =
+25°C)
Overcharge detection delay time
tCU
−
0.96
1.2
1.4
s
9
5
Overdischarge detection delay time
tDL
−
120
150
180
ms
9
5
Discharge overcurrent detection delay time
tDIOV
−
3.6
4.5
5.4
ms
10
5
Load short-circuiting detection delay time
tSHORT
−
240
300
360
μs
10
5
Charge overcurrent detection delay time
tCIOV
−
7.2
9
11
ms
10
5
Delay Time (Ta =
−40°C to +85°C)
P
*1
Overcharge detection delay time
tCU
−
0.7
1.2
2.0
s
9
5
Overdischarge detection delay time
tDL
−
83
150
255
ms
9
5
Discharge overcurrent detection delay time
tDIOV
−
2.5
4.5
7.7
ms
10
5
Load short-circuiting detection delay time
tSHORT
−
150
300
540
μs
10
5
Charge overcurrent detection delay time
tCIOV
−
5
9
15
ms
10
5
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.



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