S8213 datasheet(9/28 Pages) SII

9 / 28 page

BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK (SECONDARY PROTECTION)

Rev.1.3_01

S-8213 Series

Seiko Instruments Inc.

3. Overcharge detection delay time (tCU)

(Test circuit 1)

Set SW1 to OFF and ON in CMOS output product and Nch open-drain output product, respectively.

Increase V1 up to 5.0 V after setting V1 = V2 = V3 = 3.5 V. The overcharge detection delay time (tCU) is the time period

until the CO pin output changes.

4. Transition time to test mode (tTST)

(Test circuit 2)

Set SW1 to OFF and ON in CMOS output product and Nch open-drain output product, respectively.

Increase V4 up to 4.0 V, and decrease V4 again to 0 V after setting V1 = V2 = V3 = 3.5 V, and V4 = 0 V.

When the period from when V4 was raised to when it has fallen is short, if an overcharge detection operation is

performed subsequently, the delay time is tCU. However, when the period from when V4 is raised to when it has fallen is

gradually made longer, the delay time during the subsequent overcharge detection operation is shorter than tCU. The

transition time to test mode (tTST) is the period from when V4 was raised to when it has fallen at that time.

S8213 Datasheet(PDF) 9 Page - Seiko Instruments Inc