ISO7841 datasheet(6/31 Pages) TI

6 / 31 page

ISO7841, ISO7841F

SLLSEM3C – NOVEMBER 2014 – REVISED JULY 2015

www.ti.com

6.4 Thermal Information

DW (SOIC)

THERMAL METRIC(1)

UNIT

16 Pins

RθJA

Junction-to-ambient thermal resistance

78.9

RθJC(top)

Junction-to-case(top) thermal resistance

41.6

RθJB

Junction-to-board thermal resistance

43.6

°C/W

ψJT

Junction-to-top characterization parameter

15.5

ψJB

Junction-to-board characterization parameter

43.1

RθJC(bottom)

Junction-to-case(bottom) thermal resistance

N/A

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Power Rating

VALUE

UNIT

Maximum power dissipation by ISO7841

200

VCC1 = VCC2 = 5.5 V, TJ = 150°C,

PD1

Maximum power dissipation by side-1 of ISO7841

CL = 15 pF, input a 50 MHz 50% duty cycle

square wave

PD2

Maximum power dissipation by side-2 of ISO7841

150

6.6 Electrical Characteristics, 5 V

VCC1 = VCC2 = 5 V ±10% (over recommended operating conditions unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VOH

High-level output voltage

IOH = –4 mA; see Figure 7

VCCO

(1) – 0.4

VCCO

(1) – 0.2

VOL

Low-level output voltage

IOL = 4 mA; see Figure 7

0.2

0.4

Input threshold voltage

VI(HYS)

0.1 × VCCO

(1)

hysteresis

IIH

High-level input current

VIH = VCCI

(1) at INx or ENx

μA

IIL

Low-level input current

VIL = 0 V at INx or ENx

–10

μA

Common-mode transient

CMTI

VI = VCCI

(1) or 0 V; see Figure 10

100

kV/

μs

immunity

(1)

VCCI = Input-side VCC; VCCO = Output-side VCC.

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