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KAI-2001 Datasheet(PDF) 11 Page - ON Semiconductor |
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KAI-2001 Datasheet(HTML) 11 Page - ON Semiconductor |
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11 / 36 page ![]() KAI−2001 www.onsemi.com 11 Table 6. PERFORMANCE SPECIFICATIONS (continued) Description Temperature Tested at ( 5C) Sampling Plan Unit Max. Nom. Min. Symbol ALL CONFIGURATIONS Output Amplifier Bandwidth f−3DB − 140 − MHz Design Output Amplifier Impedance ROUT 100 130 200 W Die Output Amplifier Sensitivity DV/DN − 16 − mV/e− Design KAI−2001−ABA CONFIGURATION Peak Quantum Efficiency QEMAX 45 55 N/A % Design Peak Quantum Efficiency Wavelength lQE N/A 500 N/A nm Design KAI−2001−CBA CONFIGURATION Peak Quantum Efficiency Red Green Blue QEMAX − − − 35 42 45 N/A N/A N/A % Design Peak Quantum Efficiency Wavelength Red Green Blue lQE − − − 620 540 470 N/A N/A N/A nm Design NOTE: N/A = Not Applicable. 1. Per color. 2. Value is over the range of 10% to 90% of photodiode saturation. 3. Value is for the sensor operated without binning. 4. Includes system electronics noise, dark pattern noise and dark current shot noise at 20 MHz. 5. Includes system electronics noise, dark pattern noise and dark current shot noise at 40 MHz. 6. Uses 20LOG (PNe /ne−T). |
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