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KAI-2001 Datasheet(PDF) 18 Page - ON Semiconductor

Part # KAI-2001
Description  Interline CCD Image Sensor
PDF  36 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

KAI-2001 Datasheet(HTML) 18 Page - ON Semiconductor

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KAI−2001
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18
Global Peak to Peak Non-Uniformity
This test is performed with the imager illuminated to
a level such that the output is at 80% of saturation
(approximately 32,000 electrons). Prior to this test being
performed the substrate voltage has been set such that the
charge capacity of the sensor is 40,000 electrons. The sensor
is partitioned into 192 sub regions of interest, each of which
is 100 by 100 pixels in size. See Figure 17. The average
signal level of each of the 192 sub regions of interest (ROI)
is calculated. The signal level of each of the sub regions of
interest is calculated using the following formula:
Signal of ROI[i]
+ (ROI Average in ADU *
* Horizontal Overclock Average in ADU) @
@ mV per Count
Where i = 1 to 192. During this calculation on the 192 sub
regions of interest, the maximum and minimum signal levels
are found. The global peak to peak uniformity is then
calculated as:
Global Uniformity
+
Max. Signal
* Min. Signal
Active Area Signal
Units : % pp
Center Non-Uniformity
This test is performed with the imager illuminated to
a level such that the output is at 80% of saturation
(approximately 32,000 electrons). Prior to this test being
performed the substrate voltage has been set such that the
charge capacity of the sensor is 40,000 electrons. Defects are
excluded for the calculation of this test. This test is
performed on the center 100 by 100 pixels of the sensor (see
Figure 17). Center uniformity is defined as:
Center ROI Uniformity
+ 100 @
Center ROI Standard Deviation
Center ROI Signal
Center ROI Signal = Center ROI Average − H. Overclock Average
Units : % rms
Dark Field Defect Test
This test is performed under dark field conditions.
The sensor is partitioned into 192 sub regions of interest,
each of which is 100 by 100 pixels in size (see Figure 17).
In each region of interest, the median value of all pixels is
found. For each region of interest, a pixel is marked
defective if it is greater than or equal to the median value of
that region of interest plus the defect threshold specified in
“Defect Definitions” section.
Bright Field Defect Test
This test is performed with the imager illuminated to
a level such that the output is at 80% of saturation
(approximately 32,000 electrons). Prior to this test being
performed the substrate voltage has been set such that the
charge capacity of the sensor is 40,000 electrons.
The average signal level of all active pixels is found.
The bright and dark thresholds are set as:
Dark Defect Threshold = Active Area Signal
@ Threshold
Bright Defect Threshold = Active Area Signal
@ Threshold
The sensor is then partitioned into 192 sub regions of
interest, each of which is 100 by 100 pixels in size (see
Figure 17). In each region of interest, the average value of
all pixels is found. For each region of interest, a pixel is
marked defective if it is greater than or equal to the median
value of that region of interest plus the bright threshold
specified or if it is less than or equal to the median value of
that region of interest minus the dark threshold specified.
Example for major bright field defective pixels:
• Average value of all active pixels is found to be
416 mV (32,000 electrons).
• Dark defect threshold: 416 mV ⋅ 15% = 62.4 mV.
• Bright defect threshold: 416 mV ⋅ 15% = 62.4 mV.
• Region of interest #1 selected. This region of interest is
pixels 1, 1 to pixels 100, 100.
♦ Median of this region of interest is found to be
416 mV.
♦ Any pixel in this region of interest that is
≥ (416 + 62.4 mV) 478.4 mV in intensity will be
marked defective.
♦ Any pixel in this region of interest that is
≥ (416 − 62.4 mV) 353.6 mV in intensity will be
marked defective.
• All remaining 191 sub regions of interest are analyzed
for defective pixels in the same manner.



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