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PE43713 Datasheet(PDF) 2 Page - Peregrine Semiconductor

Part # PE43713
Description  UltraCMOS RF Digital Step Attenuator, 9 kHz-6 GHz
PDF  31 Pages
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Manufacturer  PSEMI [Peregrine Semiconductor]
Direct Link  http://www.psemi.com
Logo PSEMI - Peregrine Semiconductor

PE43713 Datasheet(HTML) 2 Page - Peregrine Semiconductor

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PE43713
UltraCMOS® RF Digital Step Attenuator
Page 2
DOC-49614-1 – (3/2015)
www.psemi.com
Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Optional External V
SS
Control
For proper operation, the VSS_EXT control pin must be grounded or tied to the VSS voltage specified in Table 2.
When the VSS_EXT control pin is grounded, FETs in the switch are biased with an internal negative voltage
generator. For applications that require the lowest possible spur performance, VSS_EXT can be applied externally
to bypass the internal negative voltage generator.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 • Absolute Maximum Ratings for PE43713
Parameter/Condition
Min
Max
Unit
Supply voltage, VDD
–0.3
5.5
V
Digital input voltage
–0.3
3.6
V
RF input power, 50
Ω
9 kHz–48 MHz
>48 MHz–6 GHz
Figure 5
+31
dBm
dBm
Storage temperature range
–65
+150
°C
ESD voltage HBM, all pins(1)
3000
V
ESD voltage CDM, all pins(2)
1000
V
Notes:
1) Human body model (MIL–STD 883 Method 3015).
2) Charged device model (JEDEC JESD22–C101).



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